Manufacturer: Infineon Technologies  •  Series: OptiMOS™  •  Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 52A, 10V  •  Drain to Source Voltage (Vdss): 55V  •  Gate Charge (Qg) @ Vgs: 105nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 80A  •  Input Capacitance (Ciss) @ Vds: 3480pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 190W  •  Mounting Type: Through Hole  •  Package / Case: TO-220  •  Other PartNo: SP000013580, SPP80N06S2L09