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SPP80N06S2L-09 — MOSFET N-CH 55V 80A TO-220

Manufacturer: Infineon Technologies  •  Series: OptiMOS™  •  Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 52A, 10V  •  Drain to Source Voltage (Vdss): 55V  •  Gate Charge (Qg) @ Vgs: 105nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 80A  •  Input Capacitance (Ciss) @ Vds: 3480pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 190W  •  Mounting Type: Through Hole  •  Package / Case: TO-220  •  Other PartNo: SP000013580, SPP80N06S2L09
Datasheet
Cross-referenceSTP85NF55L   Technical Specification »

Suppliers of «SPP80N06S2L09»

Part NoManufacturerPriceStock
Digi-ic_SMART PIONEER ElectronicFresh data!SPP80N06S2L-09 (MOSFET N-CH 55V 80A TO220-3 Подробнее)Infineon Technologies–150143
HongKong Teyou Huicheng Electronic Technology LimitedFresh data!SPP80N06S2L-09 (Package: : TO-220; , D/c: : 22+)Rochester–55000
AN-CHIPFresh data!SPP80N06S2L-09 (микросхема интегральная электронная MOSFET N-CH 55V 80A TO-220 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21)Infineon Technologies (IR)–8273