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SPI35N10
— MOSFET N-CH 100V 35A I2PAK
Discrete Semiconductor Products
»
MOSFETs - Single
Manufacturer: Infineon Technologies
•
RoHS/pb-free:
RoHS
Pb-free
•
Series: SIPMOS®
•
Rds On (Max) @ Id, Vgs: 44 mOhm @ 26.4A, 10V
•
Drain to Source Voltage (Vdss): 100V
•
Gate Charge (Qg) @ Vgs: 65nC @ 10V
•
Current - Continuous Drain (Id) @ 25° C: 35A
•
Input Capacitance (Ciss) @ Vds: 1570pF @ 25V
•
FET Polarity: N-Channel
•
FET Feature: Standard
•
Power - Max: 150W
•
Mounting Type: Through Hole
•
Package / Case: I²Pak, TO-262 (3 straight leads + tab)
•
Other PartNo: SP000013852, SPI35N10X
Datasheet
SPI35N10
- Sipmos Power-transistor
SPP_I35N10.pdf
on site infineon.com
Manufacturers
Infineon
Infineon Technologies
Infineon Technologies (IR)
Location
China
Russia
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HongKong Teyou Huicheng Electronic Technology Limited
SPI35N10
Package: : TO-262; , D/c: : 22+
Infineon
55000
Digi-ic_SMART PIONEER Electronic
SPI35N10
MOSFET N-CH 100V 35A TO262-3
Подробнее
Infineon Technologies
160468
AN-CHIP
SPI35N10
микросхема интегральная электронная MOSFET N-CH 100V 35A I2PAK 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21
Infineon Technologies (IR)
8219
ООО "Интегральные схемы"
SPI35N10
from 7 days
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SPI35N10
from 7 days
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Digi-ic_SMART PIONEER Electronic
Hong Kong
(86) 13512338801
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ShenZhen
(86) 0755-82535750
HongKong Teyou Huicheng Electronic Technology Limited
ShenZhen
(86) 18938853596, Fax: (0755) 82569815
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AN-CHIP
St. Petersburg
+7 (812) 922-25-39
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Aspect
St. Petersburg
+7 (812) 309-89-32
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ООО "Интегральные схемы"
St. Petersburg
+7 (812) 448-53-82
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