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IRFBG30S — MOSFET N-CH 1000V 3.1A D2PAK

Manufacturer: Vishay/Siliconix  •  Rds On (Max) @ Id, Vgs: 5 Ohm @ 1.9A, 10V  •  Drain to Source Voltage (Vdss): 1000V (1kV)  •  Gate Charge (Qg) @ Vgs: 80nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 3.1A  •  Input Capacitance (Ciss) @ Vds: 980pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 125W  •  Mounting Type: Surface Mount  •  Package / Case: D²Pak, TO-263 (2 leads + tab)
Datasheet
  • doc on site vishay.com

   


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Suppliers of «IRFBG30S»

SupplierPart NoManufacturerPriceStock
HongKong Teyou Huicheng Electronic Technology LimitedFresh data!IRFBG30S
Package: : TO263; , D/c: : 22+
IR 45000
AspectIRFBG30S from 7 days
AspectIRFBG30STRL from 7 days
AspectIRFBG30STRR from 7 days
ООО "Интегральные схемы"IRFBG30S from 7 days
ООО "Интегральные схемы"IRFBG30STRL from 7 days
ООО "Интегральные схемы"IRFBG30STRR from 7 days


Company Information

CompanyOfficePhoneE-mailFeedback 
HongKong Teyou Huicheng Electronic Technology LimitedShenZhen(86) 18938853596, Fax: (0755) 825698150  0 Hide
AspectSt. Petersburg+7 (812) 309-89-320  0 Hide
ООО "Интегральные схемы"St. Petersburg+7 (812) 448-53-820  0 Hide
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