Features | Manufacturer: Vishay/Siliconix • Rds On (Max) @ Id, Vgs: 5 Ohm @ 1.9A, 10V • Drain to Source Voltage (Vdss): 1000V (1kV) • Gate Charge (Qg) @ Vgs: 80nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 3.1A • Input Capacitance (Ciss) @ Vds: 980pF @ 25V • FET Polarity: N-Channel • FET Feature: Standard • Power - Max: 125W • Mounting Type: Surface Mount • Package / Case: D²Pak, TO-263 (2 leads + tab) |