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Datasheet search «gt10j312sm*»

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Toshiba Semiconductor
Toshiba Semiconductor
www.semicon.toshiba.co.jp
  1. GT10J312SM - Vces (volts) = 600 ; Ic (amps) = 10 ; Vce (sat) Max = 2.7 ; Ton (usec) = 0.4 ; Toff (usec) = 0.5 ; Additional Information =  
    295.12Kb • 6 pages • Category: IGBTs (Insulated Gate Bipolar Transistors)
  2. GT10J312 - INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
    In this document: GT10J312SM
    476.51Kb • 7 pages
 
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