1/11
March 2005
STD70NH02L
N-CHANNEL 24V - 0.0062
- 60A IPAK/DPAK
STripFETTM III POWER MOSFET
Rev.
4.0
Figure 2: Internal Schematic Diagram
Figure 1:Package
Table 1: General Features
TYPICAL R
DS
(on) = 0.0062
@ 10 V
TYPICAL R
DS
(on) = 0.008
@ 5 V
R
DS(ON)
* Qg INDUSTRY's BENCHMARK
CONDUCTION LOSSES REDUCED
SWITCHING LOSSES REDUCED
LOW THRESHOLD DEVICE
IN COMPLIANCE WITH THE 2002/95/EC
EUROPEAN DIRECTIVE
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX "-1")
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
DESCRIPTION
The STD70NH02L utilizes the latest advanced design
rules of ST's proprietary STripFETTM technology. This is
suitable fot the most demanding DC-DC converter
application where high efficiency is to be achieved.
APPLICATIONS
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC CONVERTES
Table 2:
Ordering Information
TYPE
V
DSS
R
DS(on)
I
D
STD70NH02L
24 V
< 0.008
60 A(*)
SALES TYPE
MARKING
PACKAGE
PACKAGING
STD70NH02LT4
D70NH02L
TO-252
TAPE & REEL
STD70NH02L-1
D70NH02L
TO-251
TUBE
3
2
1
1
3
IPAK
TO-251
(Suffix "-1")
DPAK
TO-252
(Suffix "T4")
Table 3: ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
spike(1)
Drain-source Voltage Rating
30
V
V
DS
Drain-source Voltage (V
GS
= 0)
24
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
24
V
V
GS
Gate- source Voltage
± 20
V
I
D
(*)
Drain Current (continuous) at T
C
= 25°C
60
A
I
D
Drain Current (continuous) at T
C
= 100°C
50
A
I
DM(2)
Drain Current (pulsed)
240
A
P
tot
Total Dissipation at T
C
= 25°C
70
W
Derating Factor
0.47
W/°C
E
AS (3)
Single Pulse Avalanche Energy
360
mJ
T
stg
Storage Temperature
-55 to 175
°C
T
j
Max. Operating Junction Temperature
STD70NH02L
2/11
Table 4: THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
Table 5: OFF
Table 6: ON
(4)
Table 7: DYNAMIC
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
2.14
100
275
°C/W
°C/W
°C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 25 mA, V
GS
= 0
24
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= 20 V
V
DS
= 20 V T
C
= 125°C
1
10
µA
µA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ± 20V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 µA
1
1.8
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V I
D
= 30 A
V
GS
= 5 V I
D
= 15 A
0.0062
0.008
0.008
0.014
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (4)
Forward Transconductance
V
DS
= 10 V I
D
= 18 A
27
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 16V f = 1 MHz V
GS
= 0
2050
545
70
pF
pF
pF
R
G
Gate Input Resistance
f = 1 MHz Gate DC Bias = 0
Test Signal Level = 20 mV
Open Drain
1
3/11
STD70NH02L
Table 8: SWITCHING ON
Table 9: SWITCHING OFF
Table 10: SOURCE DRAIN DIODE
(1)
Garanted when external Rg=4.7
and t
f
< t
fmax
.
(4)
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2)
Pulse width limited by safe operating area
(5)
Q
oss =
C
oss
*
V
in ,
C
oss =
C
gd +
C
ds .
See Appendix A
(
3
) Starting T
j
= 25
o
C, I
D
= 25A, V
DD
= 15V (*) Value limited by wire bonding
.
.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 10 V I
D
= 30 A
R
G
= 4.7
V
GS
= 5 V
(Resistive Load, Figure 17)
12
200
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 10 V I
D
= 60 A V
GS
= 5 V
17
7.7
3.5
22
nC
nC
nC
Q
oss(5)
Output Charge
V
DS
= 10 V V
GS
= 0 V
14
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 10 V I
D
= 30 A
R
G
= 4.7
,
V
GS
= 5 V
(Resistive Load, Figure 17)
18
25
33
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
Source-drain Current
Source-drain Current (pulsed)
60
240
A
A
V
SD
(4)
Forward On Voltage
I
SD
= 30 A V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 60 A di/dt = 100A/µs
V
DD
= 15 V T
j
= 150°C
(see test circuit, Figure 19)
36
65
3.6
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Figure 3: Safe Operating Area
Figure 4: Thermal Impedance
STD70NH02L
4/11
Figure 5: Output Characteristics
Figure 6: Transfer Characteristics
Figure 7: Transconductance
Figure 8: Static Drain-source On Resistance
Figure 9: Gate Charge vs Gate-source Voltage
Figure 10: Capacitance Variations
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STD70NH02L
Figure 11: Normalized Gate Threshold Voltage vs
Temperature
Figure 12: Normalized on Resistance vs Temperature
Figure 13: Source-drain Diode Forward
Characteristics
Figure 14: Normalized Breakdown Voltage vs
Temperature
.
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