ChipFind - Datasheet

Part Number BC85xxWT1

Download:  PDF   ZIP
LESHAN RADIO COMPANY, LTD.
K5­1/5
General Purpose Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
BC856
BC857
BC858
Unit
Collector­Emitter Voltage
V
CEO
­65
­45
­30
V
Collector­Base Voltage
V
CBO
­80
­50
­30
V
Emitter­Base Voltage
V
EBO
­5.0
­5.0
­5.0
V
Collector Current -- Continuous
I
C
­100
­100
­100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR­ 5 Board, (1)
P
D
150
mW
T
A
= 25°C
Thermal Resistance, Junction to Ambient
R
JA
833
°C/W
Junction and Storage Temperature
T
J
, T
stg
­55 to +150
°C
DEVICE MARKING
BC856AWT1 = 3A; BC856BWT1 = 3B; BC857AWT1 = 3E; BC857BWT1 = 3F;
BC858AWT1 = 3J; BC858BWT1 = 3K; BC858CWT1 = 3L
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector­Emitter Breakdown Voltage
BC856 Series
­ 65
--
--
(I
C
= ­10 mA)
BC857 Series
V
(BR)CEO
­ 45
--
--
v
BC858 Series
­ 30
--
--
Collector­Emitter Breakdown Voltage
BC856 Series
­ 80
--
--
(I
C
= ­10
µ
A, V
EB
= 0)
BC857 Series
V
(BR)CES
­ 50
--
--
v
BC858 Series
­ 30
--
--
Collector­Base Breakdown Voltage
BC856 Series
­ 80
--
--
(I
C
= ­ 10
µ
A)
BC857 Series
V
(BR)CBO
­ 50
--
--
v
BC858 Series
­ 30
--
--
Emitter­Base Breakdown Voltage
BC856 Series
­ 5.0
--
--
(I
E
= ­ 1.0
µ
A)
BC857 Series,
V
(BR)EBO
­ 5.0
--
--
v
BC858 Series
­ 5.0
--
--
Collector Cutoff Current (V
CB
= ­ 30 V)
I
CBO
--
--
­ 15
nA
(V
CB
= ­ 30 V, T
A
= 150°C)
--
--
­ 4.0
µ
A
1.FR­5=1.0 x 0.75 x 0.062in
These transistors are designed for general purpose
amplifier applications. They are housed in the SOT­323/
SC­70 which is designed for low power surface mount
applications.
1
3
2
BC856AWT1, BWT1
BC857AWT1, BWT1
BC858AWT1, BWT1
CWT1
2
EMITTER
3
COLLECTOR
1
BASE
CASE 419­02, STYLE 3
SOT­ 323 / SC-70
LESHAN RADIO COMPANY, LTD.
K5­2/5
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
BC856A, BC857A, BC858A
h
FE
--
90
--
--
(I
C
= ­10
µ
A, V
CE
= ­5.0 V)
BC856B, BC857B, BC858B
--
150
--
BC858C,
--
270
--
(I
C
= ­2.0 mA, V
CE
= ­5.0 V)
BC856A, BC857A, BC858A
125
180
250
BC856B, BC857B, BC858B
220
290
475
BC858C
420
520
800
Collector­Emitter Saturation Voltage (I
C
= ­10 mA, I
B
= ­ 0.5 mA)
V
CE(sat)
--
--
­ 0.3
V
Collector­Emitter Saturation Voltage
(I
C
= ­100 mA, I
B
= ­ 5.0 mA)
--
--
­ 0.65
Base­Emitter Saturation Voltage (I
C
= ­10 mA, I
B
= ­0.5 mA)
V
BE(sat)
--
­ 0.7
--
V
Base­Emitter Saturation Voltage
(I
C
= ­100 mA, I
B
= ­5.0 mA)
--
­ 0.9
--
Base­Emitter Voltage (I
C
= ­2.0 mA, V
CE
= ­5.0 V)
V
BE(on)
­ 0.6
--
­ 0.75
V
Base­Emitter Voltage
(I
C
= ­10 mA, V
CE
= ­5.0 V)
--
--
­ 0.82
SMALL­SIGNAL CHARACTERISTICS
Current­Gain -- Bandwidth Product
f
T
100
--
--
MHz
(I
C
= ­ 10 mA, V
CE
= ­ 5.0 Vdc, f = 100 MHz)
Output Capacitance (V
CB
= ­ 10 V, f = 1.0 MHz)
C
ob
--
--
4.5
pF
Noise Figure
NF
­­
­­
10
dB
(I
C
= ­ 0.2 mA,V
CE
= ­ 5.0 V
dc
, R
S
= 2.0 k
, f =1.0 kHz, BW= 200 Hz)
BC856AWT1, BWT1 BC857AWT1, BWT1 BC858AWT1, BWT1, CWT1
LESHAN RADIO COMPANY, LTD.
K5­3/5
BC856AWT1, BWT1 BC857AWT1, BWT1, BC858AWT1, BWT1, CWT1
BC857/BC858
I
C
, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
I
C
, COLLECTOR CURRENT (mAdc)
Figure 2. "Saturation" and "On" Voltages
­0.2
­0.5
­1.0
­2.0
­5.0
­10
­20
­50
­100
­200
V
CE
= ­10 V
T
A
= 25°C
2.0
1.5
1.0
0.7
0.5
0.3
0.2
­0.1
­0.2
­0.5
­1.0
­2.0
­5.0
­10
­20
­50
­100
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
=10
V
BE(on)
@ V
CE
= ­10 V
V
CE(sat)
@ I
C
/I
B
= 10
T
A
= 25°C
V
,
VOL
T
A
GE (VOL
TS)
­1.0
­0.9
­0.8
­0.7
­0.6
­0.5
­0.4
­0.3
­0.2
­0.1
0




VB
, TEMPERA
TURE COEFFICIENT (mV/ °C)
1.0
1.2
1.6
2.0
2.4
2.8
I
B
, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
V
CE
, COLLECT
OR­ EMITTER VOL
T
AGE (V)
I
C
= ­200 mA
­55°C to +125°C
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Base­Emitter Temperature Coefficient
­0.2
­1.0
­10
­100
­0.02
­0.1
­1.0
­10
­20
­2.0
­1.6
­1.2
­0.8
­0.4
0
I
C
=
­10 mA
I
C
= ­100 mA
I
C
= ­20 mA
I
C
= ­50 mA
h
FE
, NORMALIZED DC CURRENT GAIN
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
I
C
, COLLECTOR CURRENT (mAdc)
Figure 6. Current­Gain ­ Bandwidth Product
T
A
=25°C
V
CE
= ­10V
T
A
= 25°C
f
T
, CURRENT­ GAIN ­ BANDWIDTH
PRODUCT (MHz)
C, CAP
ACIT
ANCE(pF)
C
ob
C
ib
400
300
200
150
100
80
60
40
30
20
10.0
7.0
5.0
3.0
2.0
1.0
­0.4
­0.6
­1.0
­2.0
­4.0
­6.0
­10
­20
­30
­40
­0.5
­1.0
­2.0
­3.0
­5.0
­10
­20
­30
­50
LESHAN RADIO COMPANY, LTD.
K5­4/5
I
C
, COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
Figure 8. "On" Voltage
I
B
, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
I
C
, COLLECTOR CURRENT (mA)
Figure 10. Base­Emitter Temperature Coefficient
V
BE(sat)
@ I
C
/I
B
=10
V
BE
@V
CE
= ­5.0 V
T
J
= 25°C
V
CE
= ­5.0V
T
A
= 25°C
V
CE(sat)
@ I
C
/I
B
= 10
V
CE
, COLLECT
OR­ EMITTER VOL
T
AGE (VOL
TS)




VB
, TEMPERA
TURE COEFFICIENT (mV/°C)
V
,
VOL
T
AGE (VOL
TS)
I
C
=
­10mA
­100mA
­20mA
­200mA
T
J
= 25°C
VB
for V
BE
­55°C to 125°C
­1.0
­1.4
­1.8
­2.2
­2.6
­3.0
­1.0
­0.8
­0.6
­0.4
­0.2
0
2.0
1.0
0.5
0.2
­2.0
­1.6
­1.2
­0.8
­0.4
0
­0.1­0.2
­1.0 ­2.0 ­5.0 ­10 ­20 ­50 ­100­200
­0.2
­0.5 ­1.0 ­2.0
­5.0
­10 ­20
­50 ­100 ­200
­0.2
­0.5 ­1.0 ­2.0
­5.0
­10 ­20
­50 ­100 ­200
­0.02
­0.05 ­0.1 ­0.2
­0.5
­1.0 ­2.0
­5.0
­10 ­20
h
FE
, DC CURRENT GAIN (NORMALIZED)
­50mA
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
I
C
, COLLECTOR CURRENT (mA)
Figure 12. Current­Gain ­ Bandwidth Product
C, CAP
ACIT
ANCE (pF)
f
T
, CURRENT­ GAIN ­ BANDWIDTH PRODUCT T
C
ob
C
ib
T
J
= 25°C
V
CE
= ­5.0V
­0.1 ­0.2 ­0.5
­1.0 ­2.0
­5.0
­10 ­20
­50 ­100
­1.0
­10
­100
40
20
10
6.0
4.0
2.0
500
200
100
50
20
BC856AWT1, BWT1 BC857AWT1, BWT1, BC858AWT1, BWT1, CWT1
BC856
LESHAN RADIO COMPANY, LTD.
K5­5/5
BC856AWT1, BWT1 BC857AWT1, BWT1, BC858AWT1, BWT1, CWT1
t, TIME (ms)
Figure 13. Thermal Response
V
CE
, COLLECTOR­EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
The safe operating area curves indicate I
C
­V
CE
limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
The data of Figure 14 is based upon T
J(pk)
= 150°C; T
C
or T
A
is variable depending upon conditions. Pulse curves are valid for
duty cycles to 10% provided T
J(pk)
< 150°C. T
J(pk)
may be calcu-
lated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power that can
be handled to values less than the limitations imposed by the sec-
ondary breakdown.
BC558
BC557
BC556
Z
JC
(t) = r(t) R
JC
R
JC
= 83.3°C/W MAX
Z
JA
(t) = r(t) R
JA
R
JA
= 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
­ T
C
= P
(pk)
R
JC
(t)
I
C
, COLLECT
OR CURRENT (mA)
r( t), TRANSIENT THERMAL
RESIST
ANCE (NORMALIZED)
DUTY CYCLE, D = t
1
/t
2
t
1
t
2
P
(pk)
SINGLE PULSE
SINGLE PULSE
T
A
= 25°C
T
J
= 25°C
3 ms
1s
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
D=0.5
0.2
0.1
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0k
2.0k
5.0k
10k
­1.0
­0.5
­10
­30 ­45 ­65 ­100
­200
­100
­50
­10
­5.0
­2.0