SMBTA 92
Oct-14-1999
1
PNP Silicon High Voltage Transistor
· High breakdown voltage
· Low collector-emitter saturation voltage
· Complementary type: SMBTA 42 (NPN)
1
2
3
VPS05161
Type
Marking
Pin Configuration
Package
SMBTA 92
s2D
1=B
2=E
3=C
SOT-23
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
300
V
Collector-base voltage
V
CBO
300
Emitter-base voltage
V
EBO
5
DC collector current
I
C
500
mA
Base current
I
B
100
Total power dissipation
, T
S
= 74 °C
P
tot
360
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction ambient
1)
R
thJA
280
K/W
Junction - soldering point
R
thJS
210
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
SMBTA 92
Oct-14-1999
2
Electrical Characteristics at T
A
= 25°C, unless otherwise specified.
Parameter
Values
Symbol
Unit
typ.
max.
min.
DC Characteristics
V
(BR)CEO
300
-
Collector-emitter breakdown voltage
I
C
= 1 mA, I
B
= 0
V
-
Collector-base breakdown voltage
I
C
= 100 µA, I
B
= 0
V
(BR)CBO
300
-
-
Emitter-base breakdown voltage
I
E
= 100 µA, I
C
= 0
V
(BR)EBO
5
-
-
Collector cutoff current
V
CB
= 200 V, I
E
= 0
I
CBO
-
-
250
nA
Collector cutoff current
V
CB
= 200 V, I
E
= 0 , T
A
= 150 °C
I
CBO
-
-
20
µA
Emitter cutoff current
V
EB
= 5 V, I
C
= 0
I
EBO
-
-
100
nA
DC current gain 1)
I
C
= 1 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 30 mA, V
CE
= 10 V
h
FE
25
40
25
-
-
-
-
-
-
-
Collector-emitter saturation voltage1)
I
C
= 20 mA, I
B
= 2 mA
V
CEsat
-
-
0.5
V
Base-emitter saturation voltage 1)
I
C
= 20 mA, I
B
= 2 mA
V
BEsat
-
-
0.9
AC Characteristics
-
MHz
50
-
f
T
Transition frequency
I
C
= 20 mA, V
CE
= 10 V, f = 100 MHz
6
Collector-base capacitance
V
CB
= 20 V, f = 1 MHz
-
C
cb
pF
-
1) Pulse test: t < 300
µ
s; D < 2%
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