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Discrete Semiconductor Products  ·  Transistors (BJT) - Single

 
2N5551ZL1

2N5551ZL1 — TRANS NPN SS GP 0.6A 160V TO-92

ManufacturerON Semiconductor
Voltage - Collector Emitter Breakdown (Max)160V
Vce Saturation (Max) @ Ib, Ic200mV @ 5mA, 50mA
Current - Collector (Ic) (Max)600mA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Power - Max625mW
Frequency - Transition300MHz
Transistor TypeNPN
Mounting TypeThrough Hole
Package / CaseTO-92-3 (Standard Body), TO-226
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
2N5551RLRMG2N5551RLRMGON SemiconductorTRANS NPN SS GP 0.6A 160V TO-92
Voltage - Collector Emitter Breakdown (Max): 160V  ·  Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA  ·  Current - Collector (Ic) (Max): 600mA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V  ·  Power - Max: 625mW  ·  Frequency - Transition: 300MHz  ·  Transistor Type: NPN  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
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2N5551G2N5551GON SemiconductorTRANS NPN SS GP 0.6A 160V TO-92
Voltage - Collector Emitter Breakdown (Max): 160V  ·  Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA  ·  Current - Collector (Ic) (Max): 600mA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V  ·  Power - Max: 625mW  ·  Frequency - Transition: 300MHz  ·  Transistor Type: NPN  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
from 0,04
from 0,46
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2N5551RLRA2N5551RLRAON SemiconductorTRANS NPN SS GP 0.6A 160V TO92
Voltage - Collector Emitter Breakdown (Max): 160V  ·  Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA  ·  Current - Collector (Ic) (Max): 600mA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V  ·  Power - Max: 625mW  ·  Frequency - Transition: 300MHz  ·  Transistor Type: NPN  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
Additional information
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2N5551RL1GON SemiconductorTRANS NPN SS GP 0.6A 160V TO-92
Voltage - Collector Emitter Breakdown (Max): 160V  ·  Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA  ·  Current - Collector (Ic) (Max): 600mA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V  ·  Power - Max: 625mW  ·  Frequency - Transition: 300MHz  ·  Transistor Type: NPN  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
from 0,05Additional information
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2N5551RLRAG2N5551RLRAGON SemiconductorTRANS NPN GP SS 0.6A 160V TO92
Voltage - Collector Emitter Breakdown (Max): 160V  ·  Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA  ·  Current - Collector (Ic) (Max): 600mA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V  ·  Power - Max: 625mW  ·  Frequency - Transition: 300MHz  ·  Transistor Type: NPN  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
from 0,06
from 0,46
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2N5551ZL1G2N5551ZL1GON SemiconductorTRANS NPN SS GP 0.6A 160V TO-92
Voltage - Collector Emitter Breakdown (Max): 160V  ·  Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA  ·  Current - Collector (Ic) (Max): 600mA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V  ·  Power - Max: 625mW  ·  Frequency - Transition: 300MHz  ·  Transistor Type: NPN  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
from 0,05Additional information
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2N55512N5551ON SemiconductorTRANS NPN SS GP 0.6A 160V TO-92
Voltage - Collector Emitter Breakdown (Max): 160V  ·  Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA  ·  Current - Collector (Ic) (Max): 600mA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V  ·  Power - Max: 625mW  ·  Frequency - Transition: 300MHz  ·  Transistor Type: NPN  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
Additional information
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2N5551RLRP2N5551RLRPON SemiconductorTRANS NPN SS GP 0.6A 160V TO-92
Voltage - Collector Emitter Breakdown (Max): 160V  ·  Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA  ·  Current - Collector (Ic) (Max): 600mA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V  ·  Power - Max: 625mW  ·  Frequency - Transition: 300MHz  ·  Transistor Type: NPN  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
Additional information
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2N5551RLRM2N5551RLRMON SemiconductorTRANS NPN SS GP 0.6A 160V TO-92
Voltage - Collector Emitter Breakdown (Max): 160V  ·  Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA  ·  Current - Collector (Ic) (Max): 600mA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V  ·  Power - Max: 625mW  ·  Frequency - Transition: 300MHz  ·  Transistor Type: NPN  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
Additional information
Find at suppliers
2N5551RL1ON SemiconductorTRANS NPN SS GP 0.6A 160V TO-92
Voltage - Collector Emitter Breakdown (Max): 160V  ·  Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA  ·  Current - Collector (Ic) (Max): 600mA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V  ·  Power - Max: 625mW  ·  Frequency - Transition: 300MHz  ·  Transistor Type: NPN  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
Additional information
Find at suppliers
2N5551RLRPG2N5551RLRPGON SemiconductorTRANS NPN SS GP 0.6A 160V TO-92
Voltage - Collector Emitter Breakdown (Max): 160V  ·  Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA  ·  Current - Collector (Ic) (Max): 600mA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V  ·  Power - Max: 625mW  ·  Frequency - Transition: 300MHz  ·  Transistor Type: NPN  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
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