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Photo | Name | Manufacturer | Technical parameters | Prices (rub.) | Buy |
![]() | 2N5551RLRMG | ON Semiconductor | TRANS NPN SS GP 0.6A 160V TO-92 Voltage - Collector Emitter Breakdown (Max): 160V · Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA · Current - Collector (Ic) (Max): 600mA · DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V · Power - Max: 625mW · Frequency - Transition: 300MHz · Transistor Type: NPN · Mounting Type: Through Hole · Package / Case: TO-92-3 (Standard Body), TO-226 | Additional information Find at suppliers | |
![]() | 2N5551RLRA | ON Semiconductor | TRANS NPN SS GP 0.6A 160V TO92 Voltage - Collector Emitter Breakdown (Max): 160V · Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA · Current - Collector (Ic) (Max): 600mA · DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V · Power - Max: 625mW · Frequency - Transition: 300MHz · Transistor Type: NPN · Mounting Type: Through Hole · Package / Case: TO-92-3 (Standard Body), TO-226 | Additional information Find at suppliers | |
![]() | 2N5551ZL1 | ON Semiconductor | TRANS NPN SS GP 0.6A 160V TO-92 Voltage - Collector Emitter Breakdown (Max): 160V · Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA · Current - Collector (Ic) (Max): 600mA · DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V · Power - Max: 625mW · Frequency - Transition: 300MHz · Transistor Type: NPN · Mounting Type: Through Hole · Package / Case: TO-92-3 (Standard Body), TO-226 | Additional information Find at suppliers | |
2N5551RL1G | ON Semiconductor | TRANS NPN SS GP 0.6A 160V TO-92 Voltage - Collector Emitter Breakdown (Max): 160V · Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA · Current - Collector (Ic) (Max): 600mA · DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V · Power - Max: 625mW · Frequency - Transition: 300MHz · Transistor Type: NPN · Mounting Type: Through Hole · Package / Case: TO-92-3 (Standard Body), TO-226 | from 0,05 | Additional information Find at suppliers | |
![]() | 2N5551RLRAG | ON Semiconductor | TRANS NPN GP SS 0.6A 160V TO92 Voltage - Collector Emitter Breakdown (Max): 160V · Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA · Current - Collector (Ic) (Max): 600mA · DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V · Power - Max: 625mW · Frequency - Transition: 300MHz · Transistor Type: NPN · Mounting Type: Through Hole · Package / Case: TO-92-3 (Standard Body), TO-226 | from 0,06 from 0,46 | Additional information Find at suppliers |
![]() | 2N5551ZL1G | ON Semiconductor | TRANS NPN SS GP 0.6A 160V TO-92 Voltage - Collector Emitter Breakdown (Max): 160V · Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA · Current - Collector (Ic) (Max): 600mA · DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V · Power - Max: 625mW · Frequency - Transition: 300MHz · Transistor Type: NPN · Mounting Type: Through Hole · Package / Case: TO-92-3 (Standard Body), TO-226 | from 0,05 | Additional information Find at suppliers |
![]() | 2N5551 | ON Semiconductor | TRANS NPN SS GP 0.6A 160V TO-92 Voltage - Collector Emitter Breakdown (Max): 160V · Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA · Current - Collector (Ic) (Max): 600mA · DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V · Power - Max: 625mW · Frequency - Transition: 300MHz · Transistor Type: NPN · Mounting Type: Through Hole · Package / Case: TO-92-3 (Standard Body), TO-226 | Additional information Find at suppliers | |
![]() | 2N5551RLRP | ON Semiconductor | TRANS NPN SS GP 0.6A 160V TO-92 Voltage - Collector Emitter Breakdown (Max): 160V · Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA · Current - Collector (Ic) (Max): 600mA · DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V · Power - Max: 625mW · Frequency - Transition: 300MHz · Transistor Type: NPN · Mounting Type: Through Hole · Package / Case: TO-92-3 (Standard Body), TO-226 | Additional information Find at suppliers | |
![]() | 2N5551RLRM | ON Semiconductor | TRANS NPN SS GP 0.6A 160V TO-92 Voltage - Collector Emitter Breakdown (Max): 160V · Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA · Current - Collector (Ic) (Max): 600mA · DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V · Power - Max: 625mW · Frequency - Transition: 300MHz · Transistor Type: NPN · Mounting Type: Through Hole · Package / Case: TO-92-3 (Standard Body), TO-226 | Additional information Find at suppliers | |
2N5551RL1 | ON Semiconductor | TRANS NPN SS GP 0.6A 160V TO-92 Voltage - Collector Emitter Breakdown (Max): 160V · Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA · Current - Collector (Ic) (Max): 600mA · DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V · Power - Max: 625mW · Frequency - Transition: 300MHz · Transistor Type: NPN · Mounting Type: Through Hole · Package / Case: TO-92-3 (Standard Body), TO-226 | Additional information Find at suppliers | ||
![]() | 2N5551RLRPG | ON Semiconductor | TRANS NPN SS GP 0.6A 160V TO-92 Voltage - Collector Emitter Breakdown (Max): 160V · Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA · Current - Collector (Ic) (Max): 600mA · DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V · Power - Max: 625mW · Frequency - Transition: 300MHz · Transistor Type: NPN · Mounting Type: Through Hole · Package / Case: TO-92-3 (Standard Body), TO-226 | from 0,05 | Additional information Find at suppliers |
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