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STB25NM50N-1

- Dimensional Drawing

STB25NM50N-1 — MOSFET N-CH 500V 22A I2PAK

ManufacturerSTMicroelectronics
Harmful substancesRoHS   Lead-free
SeriesMDmesh™
Rds On (Max) @ Id, Vgs140 mOhm @ 11A, 10V
Drain to Source Voltage (Vdss)500V
Gate Charge (Qg) @ Vgs84nC @ 10V
Current - Continuous Drain (Id) @ 25° C22A
Input Capacitance (Ciss) @ Vds2565pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max160W
Mounting TypeThrough Hole
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
Found under name497-5729
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
STB15NM65NSTB15NM65NSTMicroelectronicsMOSFET N-CH 650V 15.5A D2PAK
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 270 mOhm @ 7.75A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 55nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15.5A  ·  Input Capacitance (Ciss) @ Vds: 1900pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 2,21Additional information
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STF6NM60NSTMicroelectronicsMOSFET N-CH 600V 4.6A TO-220FP
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 920 mOhm @ 2.3A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.6A  ·  Input Capacitance (Ciss) @ Vds: 420pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 20W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220FP
from 0,73Additional information
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STW30NM60DSTW30NM60DSTMicroelectronicsMOSFET N-CH 600V 30A TO-247
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 145 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 115nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 2520pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 312W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
from 6,25
from 12,00		Additional information
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STF13NM50NSTF13NM50NSTMicroelectronicsMOSFET N-CH 500V 12A TO-220FP
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 320 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 960pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 25W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
from 1,60
from 3,63		Additional information
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STD8NM60N-1STD8NM60N-1STMicroelectronicsMOSFET N-CH 600V 7A IPAK
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 650 mOhm @ 3.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 19nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7A  ·  Input Capacitance (Ciss) @ Vds: 560pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 70W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
Additional information
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STW25NM50NSTW25NM50NSTMicroelectronicsMOSFET N-CH 500V 22A TO-247
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 140 mOhm @ 11A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 84nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 22A  ·  Input Capacitance (Ciss) @ Vds: 2565pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 160W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
from 3,70
from 7,54		Additional information
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STE70NM60STE70NM60STMicroelectronicsMOSFET N-CH 600V 70A ISOTOP
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 55 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 266nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 70A  ·  Input Capacitance (Ciss) @ Vds: 7300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 600W  ·  Mounting Type: Chassis Mount  ·  Package / Case: ISOTOP
from 29,40
from 45,60		Additional information
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STW16NM50NSTW16NM50NSTMicroelectronicsMOSFET N-CH 500V 15A TO-247
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 260 mOhm @ 7.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 1200pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
from 2,46
from 4,75		Additional information
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STB19NF20STB19NF20STMicroelectronicsMOSFET N-CH 200V 15A D2PAK
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 160 mOhm @ 7.5A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 24nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 800pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 90W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 1,38
from 2,25		Additional information
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STW15NM60NSTW15NM60NSTMicroelectronicsMOSFET N-CH 600V 14A TO-247
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 299 mOhm @ 7A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 37nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 1250pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
from 3,06
from 6,93		Additional information
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STP12NM50NSTP12NM50NSTMicroelectronicsMOSFET N-CH 500V 11A TO-220
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 940pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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STP11NM60FPSTP11NM60FPSTMicroelectronicsMOSFET N-CH 650V 11A TO220FP
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 1000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 35W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
from 1,66
from 3,77		Additional information
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STD7NM80-1STMicroelectronicsMOSFET N-CH 800V 6.5A IPAK
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 3.25A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.5A  ·  Input Capacitance (Ciss) @ Vds: 620pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 90W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
from 1,07Additional information
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STB30NM50NSTB30NM50NSTMicroelectronicsMOSFET N-CH 500V 27A D2PAK
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 115 mOhm @ 13.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 94nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 27A  ·  Input Capacitance (Ciss) @ Vds: 2740pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 190W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 3,95
from 4,38		Additional information
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STB18NM80STMicroelectronicsMOSFET N-CH 800V 17A D2PAK
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 295 mOhm @ 8.5A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 70nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 17A  ·  Input Capacitance (Ciss) @ Vds: 2070pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 190W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 4,37
from 8,05		Additional information
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STF12NM50NSTF12NM50NSTMicroelectronicsMOSFET N-CH 500V 11A TO220FP
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 940pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 25W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
from 1,41
from 3,19		Additional information
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STD7NM50NSTD7NM50NSTMicroelectronicsMOSFET N-CH 500V 5A DPAK
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 780 mOhm @ 2.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  Input Capacitance (Ciss) @ Vds: 400pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 45W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
from 1,10
from 2,36		Additional information
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STB24NM65NSTB24NM65NSTMicroelectronicsMOSFET N-CH 650V 19A D2PAK
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 190 mOhm @ 9.5A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 70nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 19A  ·  Input Capacitance (Ciss) @ Vds: 2500pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 160W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 5,13
from 9,12		Additional information
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STP26NM60NSTP26NM60NSTMicroelectronicsMOSFET N-CH 600V 20A TO-220
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 165 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 1800pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 140W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-2 (Straight Leads)
from 2,88
from 6,82		Additional information
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STI16NM50NSTI16NM50NSTMicroelectronicsMOSFET N-CH 500V 15A I2PAK
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 260 mOhm @ 7.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 1200pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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STW20NM50STW20NM50STMicroelectronicsMOSFET N-CH 550V 20A TO-247
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 250 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 550V  ·  Gate Charge (Qg) @ Vgs: 56nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 1480pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 214W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
from 2,56
from 5,80		Additional information
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STB25NM60NSTB25NM60NSTMicroelectronicsMOSFET N-CH 600V 21A D2PAK
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 84nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 2400pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 160W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 3,36
from 3,72		Additional information
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STP20NM60FPSTP20NM60FPSTMicroelectronicsMOSFET N-CH 600V 20A TO220FP
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 290 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 54nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 1500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 45W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
from 2,56
from 5,80		Additional information
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STB25NM60N-1STB25NM60N-1STMicroelectronicsMOSFET N-CH 600V 21A I2PAK
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 84nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 2400pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 160W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
from 3,53Additional information
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STP13NM50NSTP13NM50NSTMicroelectronicsMOSFET N-CH 500V 12A TO-220
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 320 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 960pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 1,54
from 2,98		Additional information
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