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Discrete Semiconductor Products  ·  MOSFETs - Single
 
STI16NM50N

STI16NM50N — MOSFET N-CH 500V 15A I2PAK

ManufacturerSTMicroelectronics
Harmful substancesRoHS   Lead-free
SeriesMDmesh™
Rds On (Max) @ Id, Vgs260 mOhm @ 7.5A, 10V
Drain to Source Voltage (Vdss)500V
Gate Charge (Qg) @ Vgs38nC @ 10V
Current - Continuous Drain (Id) @ 25° C15A
Input Capacitance (Ciss) @ Vds1200pF @ 50V
FET PolarityN-Channel
FET FeatureStandard
Power - Max125W
Mounting TypeThrough Hole
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
STB19NM65NSTB19NM65NSTMicroelectronicsMOSFET N-CH 650V 15.5A D2PAK
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 270 mOhm @ 7.75A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 55nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15.5A  ·  Input Capacitance (Ciss) @ Vds: 1900pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 2,42
from 4,68		Additional information
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STW20NM60STW20NM60STMicroelectronicsMOSFET N-CH 600V 20A TO-247
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 290 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 54nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 1500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 192W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
from 2,56
from 5,80		Additional information
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STP7NM80STP7NM80STMicroelectronicsMOSFET N-CH 800V 6.5A TO-220
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 3.25A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.5A  ·  Input Capacitance (Ciss) @ Vds: 620pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 90W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
from 2,33
from 5,51		Additional information
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STF11NM80STF11NM80STMicroelectronicsMOSFET N-CH 800V 11A TO220FP
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 43.6nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 1630pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 35W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
from 2,56
from 5,80		Additional information
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STP30NM50NSTP30NM50NSTMicroelectronicsMOSFET N-CH 500V 27A TO-220
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 115 mOhm @ 13.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 94nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 27A  ·  Input Capacitance (Ciss) @ Vds: 2740pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 190W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
from 4,78
from 10,14		Additional information
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STB8NM60T4STB8NM60T4STMicroelectronicsMOSFET N-CH 650V 8A D2PAK
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 2,19
from 3,56		Additional information
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STF13NM50NSTF13NM50NSTMicroelectronicsMOSFET N-CH 500V 12A TO-220FP
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 320 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 960pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 25W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
from 1,60
from 3,63		Additional information
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STI15NM60NSTI15NM60NSTMicroelectronicsMOSFET N-CH 600V 14A I2PAK
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 299 mOhm @ 7A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 37nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 1250pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
Additional information
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STW26NM60NSTW26NM60NSTMicroelectronicsMOSFET N-CH 600V 20A TO-247
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 165 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 1800pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 140W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
from 3,06
from 6,50		Additional information
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STP25NM60NSTP25NM60NSTMicroelectronicsMOSFET N-CH 600V 21A TO-220
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 84nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 2400pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 160W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 3,59
from 7,02		Additional information
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STD11NM60NSTD11NM60NSTMicroelectronicsMOSFET N-CH 600V 10A DPAK
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 31nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 850pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 90W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
from 1,50
from 3,50		Additional information
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STF10NM65NSTF10NM65NSTMicroelectronicsMOSFET N-CH 650V 9A TO-220FP
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 480 mOhm @ 4.5A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9A  ·  Input Capacitance (Ciss) @ Vds: 850pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 25W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
from 1,62Additional information
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STB13NM50NSTB13NM50NSTMicroelectronicsMOSFET N-CH 500V 12A D2PAK
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 320 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 960pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
Additional information
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STW20NM65NSTMicroelectronicsMOSFET N-CH 650V 19A TO-247
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 190 mOhm @ 9.5A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 70nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 19A  ·  Input Capacitance (Ciss) @ Vds: 2500pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 160W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
Additional information
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STP11NM60ASTP11NM60ASTMicroelectronicsMOSFET N-CH 600V 11A TO-220
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 49nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 1211pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 110W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 1,66
from 3,77		Additional information
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STW25NM50NSTW25NM50NSTMicroelectronicsMOSFET N-CH 500V 22A TO-247
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 140 mOhm @ 11A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 84nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 22A  ·  Input Capacitance (Ciss) @ Vds: 2565pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 160W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
from 3,70
from 7,54		Additional information
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STP21NM60NSTP21NM60NSTMicroelectronicsMOSFET N-CH 600V 17A TO-220
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 220 mOhm @ 8.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 66nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 17A  ·  Input Capacitance (Ciss) @ Vds: 1900pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 140W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 3,04
from 6,53		Additional information
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STW55NM50NSTW55NM50NSTMicroelectronicsMOSFET N-CH 500V 54A TO-247
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 54 mOhm @ 27A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 180nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 54A  ·  Input Capacitance (Ciss) @ Vds: 5800pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 350W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
from 8,10
from 16,20		Additional information
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STP13NM50NSTP13NM50NSTMicroelectronicsMOSFET N-CH 500V 12A TO-220
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 320 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 960pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 1,54
from 2,98		Additional information
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STB21NM60NSTB21NM60NSTMicroelectronicsMOSFET N-CH 600V 17A D2PAK
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 220 mOhm @ 8.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 66nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 17A  ·  Input Capacitance (Ciss) @ Vds: 1900pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 140W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 2,90
from 5,81		Additional information
Find at suppliers
STF21NM50NSTF21NM50NSTMicroelectronicsMOSFET N-CH 500V 18A TO220FP
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 190 mOhm @ 9A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 65nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 1950pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 30W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
from 2,57
from 6,09		Additional information
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STW14NM65NSTW14NM65NSTMicroelectronicsMOSFET N-CH 650V 12A TO-247
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 45nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
from 2,56
from 5,80		Additional information
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STB15NM65NSTB15NM65NSTMicroelectronicsMOSFET N-CH 650V 15.5A D2PAK
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 270 mOhm @ 7.75A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 55nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15.5A  ·  Input Capacitance (Ciss) @ Vds: 1900pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 2,21Additional information
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STP19NM65NSTP19NM65NSTMicroelectronicsMOSFET N-CH 650V 15.5A TO-220
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 270 mOhm @ 7.75A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 55nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15.5A  ·  Input Capacitance (Ciss) @ Vds: 1900pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 2,69
from 6,09		Additional information
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STE70NM50STE70NM50STMicroelectronicsMOSFET N-CH 500V 70A ISOTOP
Series: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 50 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 266nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 70A  ·  Input Capacitance (Ciss) @ Vds: 7500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 600W  ·  Mounting Type: Chassis Mount  ·  Package / Case: ISOTOP
from 29,40
from 45,60		Additional information
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