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Photo | Name | Manufacturer | Technical parameters | Prices (rub.) | Buy |
SPI10N10 | Infineon Technologies | MOSFET N-CH 100V 10.3A I2PAK Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 170 mOhm @ 7.8A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 19.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10.3A · Input Capacitance (Ciss) @ Vds: 426pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | Additional information Find at suppliers | ||
BSP320S L6327 | Infineon Technologies | MOSFET N-CH 60V 2.9A SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.9A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.9A · Input Capacitance (Ciss) @ Vds: 340pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | from 0,24 | Additional information Find at suppliers | |
![]() | SPB47N10 | Infineon Technologies | MOSFET N-CH 100V 47A D2PAK Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 33 mOhm @ 33A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 105nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 47A · Input Capacitance (Ciss) @ Vds: 2500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 175W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Additional information Find at suppliers | |
![]() | BSP129E6327T | Infineon Technologies | MOSFET N-CH 240V 350MA SOT223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V · Drain to Source Voltage (Vdss): 240V · Gate Charge (Qg) @ Vgs: 5.7nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 350mA · Input Capacitance (Ciss) @ Vds: 108pF @ 25V · FET Polarity: N-Channel · FET Feature: Depletion Mode · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | Additional information Find at suppliers | |
![]() | BSP318S E6327 | Infineon Technologies | MOSFET N-CH 60V 2.6A SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.6A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 20nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.6A · Input Capacitance (Ciss) @ Vds: 380pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | Additional information Find at suppliers | |
![]() | SPB80N10L | Infineon Technologies | MOSFET N-CH 100V 80A D2PAK Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 14 mOhm @ 58A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 240nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 4540pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 250W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Additional information Find at suppliers | |
BUZ31 L3045A | Infineon Technologies | MOSFET N-CH 200V 14.5A TO-220 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 200 mOhm @ 9A, 5V · Drain to Source Voltage (Vdss): 200V · Current - Continuous Drain (Id) @ 25° C: 14.5A · Input Capacitance (Ciss) @ Vds: 1120pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 95W · Mounting Type: Through Hole · Package / Case: TO-220 | Additional information Find at suppliers | ||
![]() | SPD35N10 | Infineon Technologies | MOSFET N-CH 100V 35A DPAK Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 44 mOhm @ 26.4A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 65nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 35A · Input Capacitance (Ciss) @ Vds: 1570pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | from 0,96 from 2,30 | Additional information Find at suppliers |
![]() | BSP373 E6327 | Infineon Technologies | MOSFET N-CH 100V 1.7A SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.7A, 10V · Drain to Source Voltage (Vdss): 100V · Current - Continuous Drain (Id) @ 25° C: 1.7A · Input Capacitance (Ciss) @ Vds: 550pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | Additional information Find at suppliers | |
BSS139 L6327 | Infineon Technologies | MOSFET N-CH 250V 100MA SOT-23 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 14 Ohm @ 0.1mA, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 3.5nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 100mA · Input Capacitance (Ciss) @ Vds: 76pF @ 25V · FET Polarity: N-Channel · FET Feature: Depletion Mode · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23 | from 0,17 | Additional information Find at suppliers | |
SN7002W L6327 | Infineon Technologies | MOSFET N-CH 60V 230MA SOT-323 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 5 Ohm @ 230mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 1.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 230mA · Input Capacitance (Ciss) @ Vds: 45pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: SOT-323 | from 0,04 | Additional information Find at suppliers | |
![]() | BSP149 E6906 | Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 660mA, 10v · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 14nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 660mA · Input Capacitance (Ciss) @ Vds: 430pF @ 25V · FET Polarity: N-Channel · FET Feature: Depletion Mode · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | Additional information Find at suppliers | |
![]() | BSP92P L6327 | Infineon Technologies | MOSFET P-CH 250V 260MA SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 12 Ohm @ 260mA, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 5.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 260mA · Input Capacitance (Ciss) @ Vds: 104pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | from 0,27 from 0,73 | Additional information Find at suppliers |
![]() | BSP317PE6327T | Infineon Technologies | MOSFET P-CH 250V 430MA SOT223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 4 Ohm @ 430mA, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 15.1nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 430mA · Input Capacitance (Ciss) @ Vds: 262pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | Additional information Find at suppliers | |
![]() | BSP299 L6327 | Infineon Technologies | MOSFET N-CH 500V 400MA SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 10V · Drain to Source Voltage (Vdss): 500V · Current - Continuous Drain (Id) @ 25° C: 400mA · Input Capacitance (Ciss) @ Vds: 400pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | from 0,62 | Additional information Find at suppliers |
![]() | BSP89 L6327 | Infineon Technologies | MOSFET N-CH 240V 350MA SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V · Drain to Source Voltage (Vdss): 240V · Gate Charge (Qg) @ Vgs: 6.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 350mA · Input Capacitance (Ciss) @ Vds: 140pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | from 0,20 from 0,24 | Additional information Find at suppliers |
![]() | SPD18P06P | Infineon Technologies | MOSFET P-CH 60V 18.6A TO-252 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 130 mOhm @ 13.2A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 33nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18.6A · Input Capacitance (Ciss) @ Vds: 860pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 80W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | from 0,49 from 0,52 | Additional information Find at suppliers |
BSS159N E6327 | Infineon Technologies | MOSFET N-CH 60V 230MA SOT-23 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 160mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 2.9nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 230mA · Input Capacitance (Ciss) @ Vds: 44pF @ 25V · FET Polarity: N-Channel · FET Feature: Depletion Mode · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23 | Additional information Find at suppliers | ||
BSS139 L6906 | Infineon Technologies | MOSFET N-CH 250V 100MA SOT-23 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 14 Ohm @ 0.1mA, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 3.5nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 100mA · Input Capacitance (Ciss) @ Vds: 76pF @ 25V · FET Polarity: N-Channel · FET Feature: Depletion Mode · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23 | from 0,24 | Additional information Find at suppliers | |
![]() | BSS225 L6327 | Infineon Technologies | MOSFET N-CH 600V 90MA SOT-89 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 45 Ohm @ 90mA, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 5.8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 90mA · Input Capacitance (Ciss) @ Vds: 131pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: SOT-89 | from 0,28 | Additional information Find at suppliers |
![]() | BSP170PE6327 | Infineon Technologies | MOSFET P-CH 60V 1.9A SOT223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.9A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 14nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.9A · Input Capacitance (Ciss) @ Vds: 410pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | Additional information Find at suppliers | |
![]() | SN7002N E6327 | Infineon Technologies | MOSFET N-CH 60V 200MA SOT-23 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 1.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 200mA · Input Capacitance (Ciss) @ Vds: 45pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23 | Additional information Find at suppliers | |
![]() | BSS123E6327 | Infineon Technologies | MOSFET N-CH 100V 170MA SOT-23 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 2.67nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 170mA · Input Capacitance (Ciss) @ Vds: 69pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23 | Additional information Find at suppliers | |
SPP47N10 | Infineon Technologies | MOSFET N-CH 100V 47A TO-220 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 33 mOhm @ 33A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 105nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 47A · Input Capacitance (Ciss) @ Vds: 2500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 175W · Mounting Type: Through Hole · Package / Case: TO-220 | Additional information Find at suppliers | ||
SPI47N10L | Infineon Technologies | MOSFET N-CH 100V 47A I2PAK Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 26 mOhm @ 33A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 135nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 47A · Input Capacitance (Ciss) @ Vds: 2500pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 175W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | Additional information Find at suppliers |
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