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Photo | Name | Manufacturer | Technical parameters | Prices (rub.) | Buy |
![]() | BSP613P | Infineon Technologies | MOSFET P-CH 60V 2.9A SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 130 mOhm @ 2.9A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 33nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.9A · Input Capacitance (Ciss) @ Vds: 875pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | Additional information Find at suppliers | |
![]() | BSS192PE6327 | Infineon Technologies | MOSFET P-CH 250V 190MA SOT-89 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 12 Ohm @ 190mA, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 6.1nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 190mA · Input Capacitance (Ciss) @ Vds: 104pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: SOT-89 | Additional information Find at suppliers | |
![]() | BSP295E6327T | Infineon Technologies | MOSFET N-CH 60V 1.8A SOT223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.8A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 17nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.8A · Input Capacitance (Ciss) @ Vds: 368pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | from 0,33 from 0,94 | Additional information Find at suppliers |
SPI35N10 | Infineon Technologies | MOSFET N-CH 100V 35A I2PAK Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 44 mOhm @ 26.4A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 65nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 35A · Input Capacitance (Ciss) @ Vds: 1570pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | Additional information Find at suppliers | ||
![]() | BSP372 L6327 | Infineon Technologies | MOSFET N-CH 100V 1.7A SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 310 mOhm @ 1.7A, 5V · Drain to Source Voltage (Vdss): 100V · Current - Continuous Drain (Id) @ 25° C: 1.7A · Input Capacitance (Ciss) @ Vds: 520pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | from 0,42 from 0,94 | Additional information Find at suppliers |
BSP320S L6327 | Infineon Technologies | MOSFET N-CH 60V 2.9A SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.9A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.9A · Input Capacitance (Ciss) @ Vds: 340pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | from 0,24 | Additional information Find at suppliers | |
BSS84PW L6327 | Infineon Technologies | MOSFET P-CH 60V 150MA SOT-323 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 1.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 150mA · Input Capacitance (Ciss) @ Vds: 19.1pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 300mW · Mounting Type: Surface Mount · Package / Case: SOT-323 | from 0,06 | Additional information Find at suppliers | |
SPD08P06P | Infineon Technologies | MOSFET P-CH 60V 8.83A DPAK Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.2A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8.83A · Input Capacitance (Ciss) @ Vds: 420pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 42W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Additional information Find at suppliers | ||
BSS169 L6327 | Infineon Technologies | MOSFET N-CH 100V 170MA SOT-23 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 2.8nC @ 7V · Current - Continuous Drain (Id) @ 25° C: 170mA · Input Capacitance (Ciss) @ Vds: 68pF @ 25V · FET Polarity: N-Channel · FET Feature: Depletion Mode · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23 | from 0,18 | Additional information Find at suppliers | |
IPP47N10SL-26 | Infineon Technologies | MOSFET N-CH 100V 47A TO220-3 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 26 mOhm @ 33A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 135nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 47A · Input Capacitance (Ciss) @ Vds: 2500pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 175W · Mounting Type: Through Hole · Package / Case: TO-220-3 | from 0,85 | Additional information Find at suppliers | |
![]() | BSP300 E6327 | Infineon Technologies | MOSFET N-CH 800V 190MA SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 20 Ohm @ 190mA, 10V · Drain to Source Voltage (Vdss): 800V · Current - Continuous Drain (Id) @ 25° C: 190mA · Input Capacitance (Ciss) @ Vds: 230pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | Additional information Find at suppliers | |
![]() | SPB10N10 G | Infineon Technologies | MOSFET N-CH 100V 10.3A D2PAK Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 170 mOhm @ 7.8A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 19.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10.3A · Input Capacitance (Ciss) @ Vds: 426pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Additional information Find at suppliers | |
![]() | SPD11N10 | Infineon Technologies | MOSFET N-CH 100V 10.5A DPAK Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 170 mOhm @ 7.8A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 18.3nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10.5A · Input Capacitance (Ciss) @ Vds: 400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Additional information Find at suppliers | |
![]() | BSP129E6327T | Infineon Technologies | MOSFET N-CH 240V 350MA SOT223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V · Drain to Source Voltage (Vdss): 240V · Gate Charge (Qg) @ Vgs: 5.7nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 350mA · Input Capacitance (Ciss) @ Vds: 108pF @ 25V · FET Polarity: N-Channel · FET Feature: Depletion Mode · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | Additional information Find at suppliers | |
BSS123 E7874 | Infineon Technologies | MOSFET N-CH 100V 170MA SOT-23 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 2.67nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 170mA · Input Capacitance (Ciss) @ Vds: 69pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23 | Additional information Find at suppliers | ||
SN7002W L6433 | Infineon Technologies | MOSFET N-CH 60V 230MA SOT-323 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 5 Ohm @ 230mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 1.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 230mA · Input Capacitance (Ciss) @ Vds: 45pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: SOT-323 | from 0,04 | Additional information Find at suppliers | |
SPB21N10 | Infineon Technologies | MOSFET N-CH 100V 21A D2PAK Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 80 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 38.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 21A · Input Capacitance (Ciss) @ Vds: 865pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 90W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Additional information Find at suppliers | ||
![]() | BSP88E6327 | Infineon Technologies | MOSFET N-CH 240V 350MA SOT223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V · Drain to Source Voltage (Vdss): 240V · Gate Charge (Qg) @ Vgs: 6.8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 350mA · Input Capacitance (Ciss) @ Vds: 95pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | Additional information Find at suppliers | |
![]() | BSP373 L6327 | Infineon Technologies | MOSFET N-CH 100V 1.7A SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.7A, 10V · Drain to Source Voltage (Vdss): 100V · Current - Continuous Drain (Id) @ 25° C: 1.7A · Input Capacitance (Ciss) @ Vds: 550pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | from 0,27 from 0,32 | Additional information Find at suppliers |
![]() | BSS192PE6327T | Infineon Technologies | MOSFET P-CH 250V 190MA SOT-89 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 12 Ohm @ 190mA, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 6.1nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 190mA · Input Capacitance (Ciss) @ Vds: 104pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: SOT-89 | Additional information Find at suppliers | |
BUZ31 L3045A | Infineon Technologies | MOSFET N-CH 200V 14.5A TO-220 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 200 mOhm @ 9A, 5V · Drain to Source Voltage (Vdss): 200V · Current - Continuous Drain (Id) @ 25° C: 14.5A · Input Capacitance (Ciss) @ Vds: 1120pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 95W · Mounting Type: Through Hole · Package / Case: TO-220 | Additional information Find at suppliers | ||
![]() | SPP70N10L | Infineon Technologies | MOSFET N-CH 100V 70A TO-220 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 16 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 240nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 70A · Input Capacitance (Ciss) @ Vds: 4540pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 250W · Mounting Type: Through Hole · Package / Case: TO-220 | Additional information Find at suppliers | |
![]() | BSP298 L6327 | Infineon Technologies | MOSFET N-CH 400V 500MA SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 400V · Current - Continuous Drain (Id) @ 25° C: 500mA · Input Capacitance (Ciss) @ Vds: 400pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | from 0,63 | Additional information Find at suppliers |
![]() | BSP149 L6906 | Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 660mA, 10v · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 14nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 660mA · Input Capacitance (Ciss) @ Vds: 430pF @ 25V · FET Polarity: N-Channel · FET Feature: Depletion Mode · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | Additional information Find at suppliers | |
BUZ31 E3046 | Infineon Technologies | MOSFET N-CH 200V 14.5A TO-220 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 200 mOhm @ 9A, 5V · Drain to Source Voltage (Vdss): 200V · Current - Continuous Drain (Id) @ 25° C: 14.5A · Input Capacitance (Ciss) @ Vds: 1120pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 95W · Mounting Type: Through Hole · Package / Case: TO-220 | from 0,74 | Additional information Find at suppliers |
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