 - Dimensional Drawing |
SI7384DP-T1-E3 — MOSFET N-CH 30V 11A PPAK 8SOIC
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| Photo | Name | Manufacturer | Technical parameters | Prices (rub.) | Buy |
 | SI1472DH-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 5.6A SC70-6 Series: TrenchFET® · Rds On (Max) @ Id, Vgs: 57 mOhm @ 4.2A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 11nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.6A · Input Capacitance (Ciss) @ Vds: 380pF @ 15V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.8W · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363 | from 0,30 from 0,68 | Additional information Find at suppliers |
 | SI7374DP-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 24A PPAK 8SOIC Series: TrenchFET® · Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 23.8A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 122nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 24A · Input Capacitance (Ciss) @ Vds: 5500pF @ 15V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 56W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | from 1,71 from 3,99 | Additional information Find at suppliers |
 | SUM50N06-16L-E3 | Vishay/Siliconix | MOSFET N-CH 60V 50A D2PAK Series: TrenchFET® · Rds On (Max) @ Id, Vgs: 16 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 40nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 1325pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.7W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | from 1,95 from 3,28 | Additional information Find at suppliers |
 | SI4466DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 9.5A 8-SOIC Series: TrenchFET® · Rds On (Max) @ Id, Vgs: 9 mOhm @ 13.5A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 60nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 9.5A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | from 1,58 from 3,78 | Additional information Find at suppliers |
 | SI4346DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 5.9A 8-SOIC Series: TrenchFET® · Rds On (Max) @ Id, Vgs: 23 mOhm @ 8A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 10nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 5.9A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.31W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | from 0,51 from 1,16 | Additional information Find at suppliers |
 | SI4896DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 80V 6.7A 8-SOIC Series: TrenchFET® · Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 80V · Gate Charge (Qg) @ Vgs: 41nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.7A · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1.56W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | from 1,59 from 3,82 | Additional information Find at suppliers |
 | SI2306BDS-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 3.16A SOT23-3 Series: TrenchFET® · Rds On (Max) @ Id, Vgs: 47 mOhm @ 3.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 4.5nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 3.16A · Input Capacitance (Ciss) @ Vds: 305pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 750mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | from 0,17 from 0,20 | Additional information Find at suppliers |
| SI1411DH-T1-E3 | Vishay/Siliconix | MOSFET P-CH 150V 420MA SC70-6 Series: TrenchFET® · Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 6.3nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 420mA · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363 | from 0,28 from 0,32 | Additional information Find at suppliers |
| SI1419DH-T1-E3 | Vishay/Siliconix | MOSFET P-CH 200V 300MA SC70-6 Series: TrenchFET® · Rds On (Max) @ Id, Vgs: 5 Ohm @ 400mA, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 6.2nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 300mA · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363 | from 0,46 from 1,04 | Additional information Find at suppliers |
 | SI5406DC-T1-E3 | Vishay/Siliconix | MOSFET N-CH 12V 6.9A 1206-8 Series: TrenchFET® · Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.9A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 20nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 6.9A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.3W · Mounting Type: Surface Mount · Package / Case: 1206-8 ChipFET™ | from 0,68 from 1,55 | Additional information Find at suppliers |
| SI2351DS-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 2.8A SOT23-3 Series: TrenchFET® · Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.4A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 5.1nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 2.8A · Input Capacitance (Ciss) @ Vds: 250pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2.1W · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | from 0,38 from 0,86 | Additional information Find at suppliers |
 | SI4874BDY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 12A 8-SOIC Series: TrenchFET® · Rds On (Max) @ Id, Vgs: 7 mOhm @ 16A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 25nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 3230pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.6W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | from 1,17 from 2,81 | Additional information Find at suppliers |
 | SI1071X-T1-E3 | Vishay/Siliconix | MOSFET P-CH 30V 960MA SOT563F Series: TrenchFET® · Rds On (Max) @ Id, Vgs: 167 mOhm @ 960mA, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 6.64nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 960mA · Input Capacitance (Ciss) @ Vds: 315pF @ 15V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 236mW · Mounting Type: Surface Mount · Package / Case: SC-89-6, SOT-563F, SOT-666 | from 0,30 from 0,68 | Additional information Find at suppliers |
| SI7636DP-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 17A PPAK 8SOIC Series: TrenchFET® · Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 50nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 5600pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.9W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | from 1,01 from 1,09 | Additional information Find at suppliers |
 | SI1058X-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 1.3A SOT563F Series: TrenchFET® · Rds On (Max) @ Id, Vgs: 91 mOhm @ 1.3A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 5.9nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 1.3A · Input Capacitance (Ciss) @ Vds: 380pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 236mW · Mounting Type: Surface Mount · Package / Case: SC-89-6, SOT-563F, SOT-666 | from 0,17 from 0,20 | Additional information Find at suppliers |
 | SI7820DN-T1-E3 | Vishay/Siliconix | MOSFET N-CH 200V 1.7A 1212-8 Series: TrenchFET® · Rds On (Max) @ Id, Vgs: 240 mOhm @ 2.6A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.7A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | from 1,17 from 2,81 | Additional information Find at suppliers |
 | SI8429DB-T1-E1 | Vishay/Siliconix | MOSFET P-CH 8V 11.7A 2X2 4-MFP Series: TrenchFET® · Rds On (Max) @ Id, Vgs: 35 mOhm @ 1A, 4.5V · Drain to Source Voltage (Vdss): 8V · Gate Charge (Qg) @ Vgs: 26nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 11.7A · Input Capacitance (Ciss) @ Vds: 1640pF @ 4V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 6.25W · Mounting Type: Surface Mount · Package / Case: 4-MICRO FOOT®CSP | from 0,36 from 0,41 | Additional information Find at suppliers |
| SI7459DP-T1-E3 | Vishay/Siliconix | MOSFET P-CH 30V 13A PPAK 8SOIC Series: TrenchFET® · Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 22A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 170nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 13A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.9W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | from 1,34 from 1,43 | Additional information Find at suppliers |
| 2N7002K-T1-E3 | Vishay/Siliconix | MOSFET N-CH 60V 300MA SOT-23 Series: TrenchFET® · Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 0.6nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 300mA · Input Capacitance (Ciss) @ Vds: 30pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 350mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | from 0,04 from 0,06 | Additional information Find at suppliers |
 | SI3456BDV-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 4.5A 6-TSOP Series: TrenchFET® · Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.5A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.1W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | from 0,34 from 0,77 | Additional information Find at suppliers |
 | SI4850EY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 60V 6A 8-SOIC Series: TrenchFET® · Rds On (Max) @ Id, Vgs: 22 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 27nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.7W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | from 0,68 from 0,74 | Additional information Find at suppliers |
 | SI7413DN-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 8.4A 1212-8 Series: TrenchFET® · Rds On (Max) @ Id, Vgs: 15 mOhm @ 13.2A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 51nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 8.4A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | from 0,72 from 1,63 | Additional information Find at suppliers |
 | SI4686DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 18.2A 8-SOIC Series: TrenchFET® · Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 13.8A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 26nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18.2A · Input Capacitance (Ciss) @ Vds: 1220pF @ 15V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 5.2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | from 0,86 from 1,94 | Additional information Find at suppliers |
 | SI3467DV-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 3.8A 6-TSOP Series: TrenchFET® · Rds On (Max) @ Id, Vgs: 54 mOhm @ 5A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.8A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.14W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | from 0,34 from 0,77 | Additional information Find at suppliers |
 | SI4396DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 16A 8-SOIC Series: TrenchFET® · Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 1675pF @ 15V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 5.4W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | from 0,50 from 0,57 | Additional information Find at suppliers |
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