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Discrete Semiconductor Products  ·  MOSFETs - Single

 
SI1411DH-T1-E3

- Dimensional Drawing

SI1411DH-T1-E3 — MOSFET P-CH 150V 420MA SC70-6

ManufacturerVishay/Siliconix
Harmful substancesRoHS   Lead-free
SeriesTrenchFET®
Rds On (Max) @ Id, Vgs2.6 Ohm @ 500mA, 10V
Drain to Source Voltage (Vdss)150V
Gate Charge (Qg) @ Vgs6.3nC @ 10V
Current - Continuous Drain (Id) @ 25° C420mA
FET PolarityP-Channel
FET FeatureLogic Level Gate
Power - Max1W
Mounting TypeSurface Mount
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
Found under nameSI1411DH-T1-E3DKR
Analogous by characteristics
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2N7002K-T1-E32N7002K-T1-E3Vishay/SiliconixMOSFET N-CH 60V 300MA SOT-23
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 0.6nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 300mA  ·  Input Capacitance (Ciss) @ Vds: 30pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 350mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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SI3456BDV-T1-E3SI3456BDV-T1-E3Vishay/SiliconixMOSFET N-CH 30V 4.5A 6-TSOP
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.5A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
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SI4396DY-T1-E3SI4396DY-T1-E3Vishay/SiliconixMOSFET N-CH 30V 16A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 45nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 16A  ·  Input Capacitance (Ciss) @ Vds: 1675pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 5.4W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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SI7448DP-T1-E3SI7448DP-T1-E3Vishay/SiliconixMOSFET N-CH 20V 13.4A PPAK 8SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 22A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 50nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 13.4A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.9W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
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SUM110P08-11L-E3SUM110P08-11L-E3Vishay/SiliconixMOSFET P-CH 80V 110A D2PAK
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 11.2 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 80V  ·  Gate Charge (Qg) @ Vgs: 270nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 110A  ·  Input Capacitance (Ciss) @ Vds: 10850pF @ 40V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 375W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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TP0202K-T1-E3TP0202K-T1-E3Vishay/SiliconixMOSFET P-CH 30V 385MA SOT23-3
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 1nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 385mA  ·  Input Capacitance (Ciss) @ Vds: 31pF @ 15V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 350mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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SI4896DY-T1-E3SI4896DY-T1-E3Vishay/SiliconixMOSFET N-CH 80V 6.7A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 80V  ·  Gate Charge (Qg) @ Vgs: 41nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.7A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1.56W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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SI7403BDN-T1-E3SI7403BDN-T1-E3Vishay/SiliconixMOSFET P-CH 20V 8A 1212-8
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 74 mOhm @ 5.1A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 15nC @ 8V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 430pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 9.6W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® 1212-8
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SI1031R-T1-E3SI1031R-T1-E3Vishay/SiliconixMOSFET P-CH 20V 140MA SC-75A
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 1.5nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 140mA  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 250mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
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SI3483DV-T1-E3SI3483DV-T1-E3Vishay/SiliconixMOSFET P-CH 30V 4.7A 6-TSOP
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.2A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 35nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.7A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.14W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
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SI1071X-T1-E3SI1071X-T1-E3Vishay/SiliconixMOSFET P-CH 30V 960MA SOT563F
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 167 mOhm @ 960mA, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 6.64nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 960mA  ·  Input Capacitance (Ciss) @ Vds: 315pF @ 15V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 236mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-89-6, SOT-563F, SOT-666
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SI2316DS-T1-E3SI2316DS-T1-E3Vishay/SiliconixMOSFET N-CH 30V 2.9A SOT23-3
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.4A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 7nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.9A  ·  Input Capacitance (Ciss) @ Vds: 215pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 700mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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SI1304BDL-T1-E3SI1304BDL-T1-E3Vishay/SiliconixMOSFET N-CH 30V 900MA SOT323-3
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 270 mOhm @ 900mA, 4.5V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 2.7nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 900mA  ·  Input Capacitance (Ciss) @ Vds: 100pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 370mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-3, SOT-323-3
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SI3447BDV-T1-E3SI3447BDV-T1-E3Vishay/SiliconixMOSFET P-CH 12V 4.5A 6-TSOP
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 40 mOhm @ 6A, 4.5V  ·  Drain to Source Voltage (Vdss): 12V  ·  Gate Charge (Qg) @ Vgs: 14nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 4.5A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
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SI1305DL-T1-E3SI1305DL-T1-E3Vishay/SiliconixMOSFET P-CH 8V 860MA SOT323-3
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 280 mOhm @ 1A, 4.5V  ·  Drain to Source Voltage (Vdss): 8V  ·  Gate Charge (Qg) @ Vgs: 4nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 860mA  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 290mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-3, SOT-323-3
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SI7382DP-T1-E3SI7382DP-T1-E3Vishay/SiliconixMOSFET N-CH 30V 14A PPAK 8SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 24A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 40nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
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SI4425BDY-T1-E3SI4425BDY-T1-E3Vishay/SiliconixMOSFET P-CH 30V 8.8A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 12 mOhm @ 11.4A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 100nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.8A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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SUM60N10-17-E3SUM60N10-17-E3Vishay/SiliconixMOSFET N-CH 100V 60A D2PAK
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 100nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 4300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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SI4890DY-T1-E3SI4890DY-T1-E3Vishay/SiliconixMOSFET N-CH 30V 11A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 12 mOhm @ 11A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
from 1,66
from 3,99
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SI7802DN-T1-E3SI7802DN-T1-E3Vishay/SiliconixMOSFET N-CH 250V 1.24A 1212-8
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 435 mOhm @ 1.95A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 21nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.24A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® 1212-8
from 1,58
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SI7421DN-T1-E3SI7421DN-T1-E3Vishay/SiliconixMOSFET P-CH 30V 6.4A 1212-8
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 25 mOhm @ 9.8A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 40nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.4A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® 1212-8
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SI4446DY-T1-E3SI4446DY-T1-E3Vishay/SiliconixMOSFET N-CH 40V 3.9A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 40 mOhm @ 5.2A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 3.9A  ·  Input Capacitance (Ciss) @ Vds: 700pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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SI3424DV-T1-E3SI3424DV-T1-E3Vishay/SiliconixMOSFET N-CH 30V 5A 6-TSOP
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.7A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.14W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
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SUM18N25-165-E3SUM18N25-165-E3Vishay/SiliconixMOSFET N-CH 250V 18A D2PAK
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 165 mOhm @ 14A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 45nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 1950pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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SUM40N15-38-E3SUM40N15-38-E3Vishay/SiliconixMOSFET N-CH 150V 40A D2PAK
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 38 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 150V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 2500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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