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Discrete Semiconductor Products  ·  MOSFETs - Single
 
SI1039X-T1-E3

- Dimensional Drawing

SI1039X-T1-E3 — MOSFET P-CH 12V 870MA SOT563F

ManufacturerVishay/Siliconix
Harmful substancesRoHS   Lead-free
SeriesTrenchFET®
Rds On (Max) @ Id, Vgs165 mOhm @ 870mA, 4.5V
Drain to Source Voltage (Vdss)12V
Gate Charge (Qg) @ Vgs6nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C870mA
FET PolarityP-Channel
FET FeatureLogic Level Gate
Power - Max170mW
Mounting TypeSurface Mount
Package / CaseSC-89-6, SOT-563F, SOT-666
Found under nameSI1039X-T1-E3DKR
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
SI8429DB-T1-E1SI8429DB-T1-E1Vishay/SiliconixMOSFET P-CH 8V 11.7A 2X2 4-MFP
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 35 mOhm @ 1A, 4.5V  ·  Drain to Source Voltage (Vdss): 8V  ·  Gate Charge (Qg) @ Vgs: 26nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 11.7A  ·  Input Capacitance (Ciss) @ Vds: 1640pF @ 4V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 6.25W  ·  Mounting Type: Surface Mount  ·  Package / Case: 4-MICRO FOOT®CSP
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SI4427BDY-T1-E3SI4427BDY-T1-E3Vishay/SiliconixMOSFET P-CH 30V 9.7A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 12.6A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 70nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 9.7A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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SI7414DN-T1-E3SI7414DN-T1-E3Vishay/SiliconixMOSFET N-CH 60V 5.6A 1212-8
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 25 mOhm @ 8.7A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.6A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® 1212-8
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SI4850EY-T1-E3SI4850EY-T1-E3Vishay/SiliconixMOSFET N-CH 60V 6A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 22 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 27nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.7W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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SI1472DH-T1-E3SI1472DH-T1-E3Vishay/SiliconixMOSFET N-CH 30V 5.6A SC70-6
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 57 mOhm @ 4.2A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 11nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.6A  ·  Input Capacitance (Ciss) @ Vds: 380pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
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SI4838DY-T1-E3SI4838DY-T1-E3Vishay/SiliconixMOSFET N-CH 12V 17A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 3 mOhm @ 25A, 4.5V  ·  Drain to Source Voltage (Vdss): 12V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 17A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.6W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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TN0200K-T1-E3TN0200K-T1-E3Vishay/SiliconixMOSFET N-CH 20V 730MA SOT23-3
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 2nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 730mA  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 350mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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SI5499DC-T1-E3Vishay/SiliconixMOSFET P-CH 8V 6A 1206-8
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.1A, 4.5V  ·  Drain to Source Voltage (Vdss): 8V  ·  Gate Charge (Qg) @ Vgs: 35nC @ 8V  ·  Current - Continuous Drain (Id) @ 25° C: 6A  ·  Input Capacitance (Ciss) @ Vds: 1290pF @ 4V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 6.2W  ·  Mounting Type: Surface Mount  ·  Package / Case: 1206-8 ChipFET™
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SUM110N04-04-E3SUM110N04-04-E3Vishay/SiliconixMOSFET N-CH 40V 110A D2PAK
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 200nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 110A  ·  Input Capacitance (Ciss) @ Vds: 6800pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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SI7366DP-T1-E3SI7366DP-T1-E3Vishay/SiliconixMOSFET N-CH 20V 13A PPAK 8SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 13A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.7W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK SO-8
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SI1470DH-T1-E3SI1470DH-T1-E3Vishay/SiliconixMOSFET N-CH 30V 5.1A SC70-6
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 66 mOhm @ 3.8A, 4.5V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 7.5nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 5.1A  ·  Input Capacitance (Ciss) @ Vds: 510pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
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SI5404BDC-T1-E3SI5404BDC-T1-E3Vishay/SiliconixMOSFET N-CH 20V 5.4A 1206-8
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 28 mOhm @ 5.4A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 11nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 5.4A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.3W  ·  Mounting Type: Surface Mount  ·  Package / Case: 1206-8 ChipFET™
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SI8407DB-T2-E1SI8407DB-T2-E1Vishay/SiliconixMOSFET P-CH 20V 5.8A 2X2 6-MFP
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 27 mOhm @ 1A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 50nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 5.8A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.47W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-MICRO FOOT®CSP
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SUM52N20-39P-E3SUM52N20-39P-E3Vishay/SiliconixMOSFET N-CH 200V 52A D2PAK
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 38 mOhm @ 20A, 15V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 185nC @ 15V  ·  Current - Continuous Drain (Id) @ 25° C: 52A  ·  Input Capacitance (Ciss) @ Vds: 4220pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.12W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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SI2327DS-T1-E3SI2327DS-T1-E3Vishay/SiliconixMOSFET P-CH 200V 380MA SOT23-3
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 2.35 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 380mA  ·  Input Capacitance (Ciss) @ Vds: 510pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 750mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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TP0101K-T1-E3TP0101K-T1-E3Vishay/SiliconixMOSFET P-CH 20V 580MA SOT23-3
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 650 mOhm @ 580mA, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 2.2nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 580mA  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 350mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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SI4384DY-T1-E3SI4384DY-T1-E3Vishay/SiliconixMOSFET N-CH 30V 10A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.47W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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SI7483ADP-T1-E3SI7483ADP-T1-E3Vishay/SiliconixMOSFET P-CH 30V 14A PPAK 8SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 24A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 180nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.9W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
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SIE820DF-T1-E3SIE820DF-T1-E3Vishay/SiliconixMOSFET N-CH 20V 50A 10-POLARPAK
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 18A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 143nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 4300pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 104W  ·  Mounting Type: Surface Mount  ·  Package / Case: 10-PolarPAK® (S)
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SUM110N06-3M9H-E3SUM110N06-3M9H-E3Vishay/SiliconixMOSFET N-CH 60V 110A D2PAK
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 300nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 110A  ·  Input Capacitance (Ciss) @ Vds: 15800pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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SI8415DB-T1-E1SI8415DB-T1-E1Vishay/SiliconixMOSFET P-CH 12V 5.3A 2X2 4-MFP
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 37 mOhm @ 1A, 4.5V  ·  Drain to Source Voltage (Vdss): 12V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 5.3A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.47W  ·  Mounting Type: Surface Mount  ·  Package / Case: 4-MICRO FOOT®CSP
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SI1413EDH-T1-E3SI1413EDH-T1-E3Vishay/SiliconixMOSFET P-CH 20V 2.3A SC70-6
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.9A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 8nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 2.3A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
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SI4348DY-T1-E3SI4348DY-T1-E3Vishay/SiliconixMOSFET N-CH 30V 8A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 11A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 23nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.31W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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SI5486DU-T1-E3Vishay/SiliconixMOSFET N-CH 20V 12A PPAK CHIPFET
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 15 mOhm @ 7.7A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 54nC @ 8V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 2100pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 31W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® ChipFET Single
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SI7818DN-T1-E3SI7818DN-T1-E3Vishay/SiliconixMOSFET N-CH 150V 2.2A 1212-8
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 135 mOhm @ 3.4A, 10V  ·  Drain to Source Voltage (Vdss): 150V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.2A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® 1212-8
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