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SI8407DB-T2-E1 — MOSFET P-CH 20V 5.8A 2X2 6-MFP

Manufacturer: Vishay/Siliconix  •  RoHS/pb-free: RoHS   Pb-free  •  Series: TrenchFET®  •  Rds On (Max) @ Id, Vgs: 27 mOhm @ 1A, 4.5V  •  Drain to Source Voltage (Vdss): 20V  •  Gate Charge (Qg) @ Vgs: 50nC @ 4.5V  •  Current - Continuous Drain (Id) @ 25° C: 5.8A  •  FET Polarity: P-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 1.47W  •  Mounting Type: Surface Mount  •  Package / Case: 6-MICRO FOOT®CSP  •  Other PartNo: SI8407DB-T2-E1DKR
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Suppliers of «SI8407DB-T2-E1»

SupplierPart NoManufacturerPriceStock
AspectSI8407DB-T2-E1 from 7 days
ООО "Интегральные схемы"SI8407DB-T2-E1 from 7 days
Digi-ic_SMART PIONEER ElectronicFresh data!SI8407DB-T2-E1
MOSFET P-CH 20V 5.8A 6MICRO FOOT Подробнее
Vishay Siliconix 161309
HUAYI (BEIJING) TECHNOLOGY LIMITEDFresh data!SI8407DB-T2-E1
23+
Silicon 128


Company Information

CompanyOfficePhoneE-mailFeedback 
Digi-ic_SMART PIONEER ElectronicHong Kong(86) 135123388010  0 Hide
ShenZhen(86) 0755-82535750
HUAYI (BEIJING) TECHNOLOGY LIMITEDBeijing(+86) 135203758590  0 Hide
AspectSt. Petersburg+7 (812) 309-89-320  0 Hide
ООО "Интегральные схемы"St. Petersburg+7 (812) 448-53-820  0 Hide
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