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RJK0392DPA-00#J53 — MOSFET N-CH 30V 45A W-PAK

ManufacturerRenesas Technology America
Harmful substancesRoHS   Lead-free
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C45A
FET PolarityN-Channel
FET FeatureStandard
Mounting TypeSurface Mount
Package / CaseWPAK
Found under nameRJK0392DPA-00#J53DKR
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2SK2315TYTRRenesas Technology AmericaMOSFET N-CH 60V 2A UPAK
Rds On (Max) @ Id, Vgs: 450 mOhm @ 1A, 4V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 173pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: UPAK
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HAF1002-90STL-ERenesas Technology AmericaMOSFET P-CH 60V 15A 4LDPAK
Rds On (Max) @ Id, Vgs: 90 mOhm @ 7.5A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 50W  ·  Mounting Type: Through Hole  ·  Package / Case: LDPAK
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HAT2160N-EL-ERenesas Technology AmericaMOSFET N-CH 20V 60A LFPAKI
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 50nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 7600pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK-i
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RJK0355DPA-00#J0RJK0355DPA-00#J0Renesas Technology AmericaMOSFET N-CH 30V 30A WPAK
Rds On (Max) @ Id, Vgs: 10.7 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 6.3nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 860pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 25W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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HAT2198RHAT2198RRenesas Technology AmericaMOSFET N-CH 30V 14A 8-SOP
Rds On (Max) @ Id, Vgs: 9 mOhm @ 7A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 11nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 1650pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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HAT2168H-EL-ERenesas Technology AmericaMOSFET N-CH 30V 30A 5LFPAK
Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 11nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1730pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 15W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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HAT2200WPRenesas Technology AmericaMOSFET N-CH 100V 20A WPAK
Rds On (Max) @ Id, Vgs: 28 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 32nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 2300pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 20W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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HAT2168N-EL-ERenesas Technology AmericaMOSFET N-CH 30V 30A LFPAKI
Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 11nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1730pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 15W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK-i
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HAT2165NRenesas Technology AmericaMOSFET N-CH 30V 55A LFPAKI
Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 27.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 33nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 55A  ·  Input Capacitance (Ciss) @ Vds: 5180pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK-i
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HAT2160HRenesas Technology AmericaMOSFET N-CH 20V 60A LFPAK
Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 54nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 7750pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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HAT2211RHAT2211RRenesas Technology AmericaMOSFET N-CH 30V 8A 8-SOP
Drain to Source Voltage (Vdss): 30V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Mounting Type: Surface Mount  ·  Package / Case: 11-HSOP
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RJK0348DPA-00#J0RJK0348DPA-00#J0Renesas Technology AmericaMOSFET N-CH 30V 50A WPAK
Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 34nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 5100pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 55W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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RJK0329DPB-00#J0RJK0329DPB-00#J0Renesas Technology AmericaMOSFET N-CH 30V 55A LFPAK
Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 27.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 35nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 55A  ·  Input Capacitance (Ciss) @ Vds: 5330pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 60W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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HAT2165HRenesas Technology AmericaMOSFET N-CH 30V 55A LFPAK
Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 27.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 33nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 55A  ·  Input Capacitance (Ciss) @ Vds: 5180pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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HAT2172HRenesas Technology AmericaMOSFET N-CH 40V 30A LFPAK
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 32nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 2420pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 20W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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HAT1043M-EL-ERenesas Technology AmericaMOSFET P-CH 20V 4.4A 6TSOP
Rds On (Max) @ Id, Vgs: 65 mOhm @ 3A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 11nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 4.4A  ·  Input Capacitance (Ciss) @ Vds: 750pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.05W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
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RJK0349DPA-00#J0RJK0349DPA-00#J0Renesas Technology AmericaMOSFET N-CH 30V 45A WPAK
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 22.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 45A  ·  Input Capacitance (Ciss) @ Vds: 3850pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 50W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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RJK0352DSP-00#J0RJK0352DSP-00#J0Renesas Technology AmericaMOSFET N-CH 30V 18A 8-SOP
Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 9A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 16nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 2440pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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HAT2134HRenesas Technology AmericaMOSFET N-CH 20V 60A 5LFPAK
Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 70nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 4500pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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2SK3288ENTLRenesas Technology AmericaMOSFET N-CH 30V .1A MPAK
Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 50mA, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Current - Continuous Drain (Id) @ 25° C: 100mA  ·  Input Capacitance (Ciss) @ Vds: 3pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 400mW  ·  Mounting Type: Surface Mount  ·  Package / Case: MPAK
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RJK0390DPA-00#J53Renesas Technology AmericaMOSFET N-CH 30V 65A W-PAK
Drain to Source Voltage (Vdss): 30V  ·  Current - Continuous Drain (Id) @ 25° C: 65A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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RJK0302DPB-00#J0Renesas Technology AmericaMOSFET N-CH 30V 50A 5-LFPAK
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 28nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 4200pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 60W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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HAT2129HRenesas Technology AmericaMOSFET N-CH 40V 30A LFPAK
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 46nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 3200pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 20W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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HAT2197WPRenesas Technology AmericaMOSFET N-CH 30V 35A WPAK
Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 35A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 20W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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HAT2265H-EL-ERenesas Technology AmericaMOSFET N-CH 30V 55A 5LFPAK
Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 27.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 33nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 55A  ·  Input Capacitance (Ciss) @ Vds: 5180pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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