Discrete Semiconductor Products · MOSFETs - Single

BSP149 E6906 — MOSFET N-CH 200V 660MA SOT-223

Manufacturer	Infineon Technologies

Series	SIPMOS®
Rds On (Max) @ Id, Vgs	1.8 Ohm @ 660mA, 10v
Drain to Source Voltage (Vdss)	200V
Gate Charge (Qg) @ Vgs	14nC @ 5V
Current - Continuous Drain (Id) @ 25° C	660mA
Input Capacitance (Ciss) @ Vds	430pF @ 25V
FET Polarity	N-Channel
FET Feature	Depletion Mode
Power - Max	1.8W
Mounting Type	Surface Mount
Package / Case	SOT-223 (3 leads + Tab), SC-73, TO-261AA
Found under name	BSP149E6906T, SP000055414

Analogous by characteristics

Photo	Name	Manufacturer	Technical parameters	Prices (rub.)	Buy
	SPI10N10	Infineon Technologies	MOSFET N-CH 100V 10.3A I2PAK Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 170 mOhm @ 7.8A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 19.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10.3A · Input Capacitance (Ciss) @ Vds: 426pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)		Additional information Find at suppliers
	BSP320S L6327	Infineon Technologies	MOSFET N-CH 60V 2.9A SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.9A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.9A · Input Capacitance (Ciss) @ Vds: 340pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA	from 0,24	Additional information Find at suppliers
	SPB47N10	Infineon Technologies	MOSFET N-CH 100V 47A D2PAK Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 33 mOhm @ 33A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 105nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 47A · Input Capacitance (Ciss) @ Vds: 2500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 175W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)		Additional information Find at suppliers
	BSP129E6327T	Infineon Technologies	MOSFET N-CH 240V 350MA SOT223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V · Drain to Source Voltage (Vdss): 240V · Gate Charge (Qg) @ Vgs: 5.7nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 350mA · Input Capacitance (Ciss) @ Vds: 108pF @ 25V · FET Polarity: N-Channel · FET Feature: Depletion Mode · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA		Additional information Find at suppliers
	BSP318S E6327	Infineon Technologies	MOSFET N-CH 60V 2.6A SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.6A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 20nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.6A · Input Capacitance (Ciss) @ Vds: 380pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA		Additional information Find at suppliers
	SPB80N10L	Infineon Technologies	MOSFET N-CH 100V 80A D2PAK Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 14 mOhm @ 58A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 240nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 4540pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 250W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)		Additional information Find at suppliers
	BUZ31 L3045A	Infineon Technologies	MOSFET N-CH 200V 14.5A TO-220 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 200 mOhm @ 9A, 5V · Drain to Source Voltage (Vdss): 200V · Current - Continuous Drain (Id) @ 25° C: 14.5A · Input Capacitance (Ciss) @ Vds: 1120pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 95W · Mounting Type: Through Hole · Package / Case: TO-220		Additional information Find at suppliers
	SPD35N10	Infineon Technologies	MOSFET N-CH 100V 35A DPAK Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 44 mOhm @ 26.4A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 65nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 35A · Input Capacitance (Ciss) @ Vds: 1570pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	from 0,96 from 2,30	Additional information Find at suppliers
	BSP373 E6327	Infineon Technologies	MOSFET N-CH 100V 1.7A SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.7A, 10V · Drain to Source Voltage (Vdss): 100V · Current - Continuous Drain (Id) @ 25° C: 1.7A · Input Capacitance (Ciss) @ Vds: 550pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA		Additional information Find at suppliers
	BSS139 L6327	Infineon Technologies	MOSFET N-CH 250V 100MA SOT-23 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 14 Ohm @ 0.1mA, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 3.5nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 100mA · Input Capacitance (Ciss) @ Vds: 76pF @ 25V · FET Polarity: N-Channel · FET Feature: Depletion Mode · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23	from 0,17	Additional information Find at suppliers
	SN7002W L6327	Infineon Technologies	MOSFET N-CH 60V 230MA SOT-323 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 5 Ohm @ 230mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 1.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 230mA · Input Capacitance (Ciss) @ Vds: 45pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: SOT-323	from 0,04	Additional information Find at suppliers
	BSP92P L6327	Infineon Technologies	MOSFET P-CH 250V 260MA SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 12 Ohm @ 260mA, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 5.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 260mA · Input Capacitance (Ciss) @ Vds: 104pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA	from 0,27 from 0,73	Additional information Find at suppliers
	BSP317PE6327T	Infineon Technologies	MOSFET P-CH 250V 430MA SOT223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 4 Ohm @ 430mA, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 15.1nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 430mA · Input Capacitance (Ciss) @ Vds: 262pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA		Additional information Find at suppliers
	BSP299 L6327	Infineon Technologies	MOSFET N-CH 500V 400MA SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 10V · Drain to Source Voltage (Vdss): 500V · Current - Continuous Drain (Id) @ 25° C: 400mA · Input Capacitance (Ciss) @ Vds: 400pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA	from 0,62	Additional information Find at suppliers
	BSP89 L6327	Infineon Technologies	MOSFET N-CH 240V 350MA SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V · Drain to Source Voltage (Vdss): 240V · Gate Charge (Qg) @ Vgs: 6.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 350mA · Input Capacitance (Ciss) @ Vds: 140pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA	from 0,20 from 0,24	Additional information Find at suppliers
	SPD18P06P	Infineon Technologies	MOSFET P-CH 60V 18.6A TO-252 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 130 mOhm @ 13.2A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 33nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18.6A · Input Capacitance (Ciss) @ Vds: 860pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 80W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	from 0,49 from 0,52	Additional information Find at suppliers
	BSS159N E6327	Infineon Technologies	MOSFET N-CH 60V 230MA SOT-23 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 160mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 2.9nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 230mA · Input Capacitance (Ciss) @ Vds: 44pF @ 25V · FET Polarity: N-Channel · FET Feature: Depletion Mode · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23		Additional information Find at suppliers
	BSS139 L6906	Infineon Technologies	MOSFET N-CH 250V 100MA SOT-23 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 14 Ohm @ 0.1mA, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 3.5nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 100mA · Input Capacitance (Ciss) @ Vds: 76pF @ 25V · FET Polarity: N-Channel · FET Feature: Depletion Mode · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23	from 0,24	Additional information Find at suppliers
	BSS225 L6327	Infineon Technologies	MOSFET N-CH 600V 90MA SOT-89 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 45 Ohm @ 90mA, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 5.8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 90mA · Input Capacitance (Ciss) @ Vds: 131pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: SOT-89	from 0,28	Additional information Find at suppliers
	BSP170PE6327	Infineon Technologies	MOSFET P-CH 60V 1.9A SOT223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.9A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 14nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.9A · Input Capacitance (Ciss) @ Vds: 410pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA		Additional information Find at suppliers
	SN7002N E6327	Infineon Technologies	MOSFET N-CH 60V 200MA SOT-23 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 1.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 200mA · Input Capacitance (Ciss) @ Vds: 45pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23		Additional information Find at suppliers
	BSS123E6327	Infineon Technologies	MOSFET N-CH 100V 170MA SOT-23 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 2.67nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 170mA · Input Capacitance (Ciss) @ Vds: 69pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23		Additional information Find at suppliers
	SPP47N10	Infineon Technologies	MOSFET N-CH 100V 47A TO-220 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 33 mOhm @ 33A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 105nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 47A · Input Capacitance (Ciss) @ Vds: 2500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 175W · Mounting Type: Through Hole · Package / Case: TO-220		Additional information Find at suppliers
	SPI47N10L	Infineon Technologies	MOSFET N-CH 100V 47A I2PAK Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 26 mOhm @ 33A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 135nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 47A · Input Capacitance (Ciss) @ Vds: 2500pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 175W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)		Additional information Find at suppliers
	SPB70N10L	Infineon Technologies	MOSFET N-CH 100V 70A D2PAK Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 16 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 240nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 70A · Input Capacitance (Ciss) @ Vds: 4540pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 250W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)		Additional information Find at suppliers

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