Log in Register |
|
Photo | Name | Manufacturer | Technical parameters | Prices (rub.) | Buy |
SPB80N03S2L-06 G | Infineon Technologies | MOSFET N-CH 30V 80A D2PAK Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 68nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 2530pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 150W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Additional information Find at suppliers | ||
IPB019N06L3 G | Infineon Technologies | MOSFET N-CH 60V 120A TO263-3 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 100A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 166nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 120A · Input Capacitance (Ciss) @ Vds: 28000pF @ 30V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 250W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | from 1,78 | Additional information Find at suppliers | |
SPD30N03S2L10T | Infineon Technologies | MOSFET N-CH 30V 30A DPAK Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 41.8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1550pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 100W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Additional information Find at suppliers | ||
BSC889N03LS G | Infineon Technologies | MOSFET N-CH 30V 45A TDSON-8 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 16nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 1300pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 28W · Mounting Type: Surface Mount · Package / Case: TDSON-8 | from 0,27 | Additional information Find at suppliers | |
BSC119N03S G | Infineon Technologies | MOSFET N-CH 30V 30A TDSON-8 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 11.9 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 11nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1370pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 43W · Mounting Type: Surface Mount · Package / Case: TDSON-8 | from 0,88 from 1,98 | Additional information Find at suppliers | |
IPD035N06L3 G | Infineon Technologies | MOSFET N-CH 60V 90A TO252-3 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 90A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 79nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 90A · Input Capacitance (Ciss) @ Vds: 13000pF @ 30V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 167W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | from 0,87 | Additional information Find at suppliers | |
IPB04N03LB | Infineon Technologies | MOSFET N-CH 30V 80A D2PAK Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 55A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 40nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 5203pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 107W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Additional information Find at suppliers | ||
BSS209PW L6327 | Infineon Technologies | MOSFET P-CH 20V 580MA SOT-323 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 550 mOhm @ 580mA, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 1.38nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 580mA · Input Capacitance (Ciss) @ Vds: 89.9pF @ 15V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 520mW · Mounting Type: Surface Mount · Package / Case: SOT-323 | from 0,10 | Additional information Find at suppliers | |
BSC123N08NS3 G | Infineon Technologies | MOSFET N-CH 80V 55A TDSON-8 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 12.3 mOhm @ 33A, 10V · Drain to Source Voltage (Vdss): 80V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 55A · Input Capacitance (Ciss) @ Vds: 1870pF @ 40V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 66W · Mounting Type: Surface Mount · Package / Case: TDSON-8 | from 0,44 | Additional information Find at suppliers | |
IPD15N06S2L-64 | Infineon Technologies | MOSFET N-CH 55V 19A TO252-3 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 64 mOhm @ 13A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 19A · Input Capacitance (Ciss) @ Vds: 354pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 47W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | from 0,25 | Additional information Find at suppliers | |
IPP041N04N G | Infineon Technologies | MOSFET N-CH 40V 80A TO220-3 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 56nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 4500pF @ 20V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 94W · Mounting Type: Through Hole · Package / Case: TO-220 | from 0,67 | Additional information Find at suppliers | |
BSO4410 | Infineon Technologies | MOSFET N-CH 30V 11.1A 8-SOIC Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 13 mOhm @ 11.1A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 21nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 11.1A · Input Capacitance (Ciss) @ Vds: 1280pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC | from 0,42 from 0,95 | Additional information Find at suppliers | |
IPI086N10N3 G | Infineon Technologies | MOSFET N-CH 100V 80A TO262-3 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 73A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 55nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 3980pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | from 1,00 | Additional information Find at suppliers | |
BSC123N10LS G | Infineon Technologies | MOSFET N-CH 100V 71A TDSON-8 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 12.3 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 68nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 71A · Input Capacitance (Ciss) @ Vds: 4900pF @ 50V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 114W · Mounting Type: Surface Mount · Package / Case: TDSON-8 | from 0,96 | Additional information Find at suppliers | |
IPB080N06N G | Infineon Technologies | MOSFET N-CH 60V 80A TO-263 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 93nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 3500pF @ 30V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 214W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | from 0,83 from 0,91 | Additional information Find at suppliers | |
IPP100N10S3-05 | Infineon Technologies | MOSFET N-CH 100V 100A T0220-3 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 100A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 176nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 11570pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: TO-220-3 | from 1,65 | Additional information Find at suppliers | |
IPP45N06S3-16 | Infineon Technologies | MOSFET N-CH 55V 45A TO-220 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 15.7 mOhm @ 23A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 57nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 2980pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 65W · Mounting Type: Through Hole · Package / Case: TO-220 | from 0,46 from 1,15 | Additional information Find at suppliers | |
IPP080N03L G | Infineon Technologies | MOSFET N-CH 30V 50A TO220-3 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 1900pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 47W · Mounting Type: Through Hole · Package / Case: TO-220 | from 0,41 | Additional information Find at suppliers | |
IPP80N06S2L-H5 | Infineon Technologies | MOSFET N-CH 55V 80A TO220-3 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 5 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 190nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 5000pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: TO-220 | from 1,14 | Additional information Find at suppliers | |
BSS214NW L6327 | Infineon Technologies | MOSFET N-CH 20V 1.5A SOT-323 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 0.8nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 1.5A · Input Capacitance (Ciss) @ Vds: 143pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: SOT-323 | from 0,12 | Additional information Find at suppliers | |
IPD70N10S3L-12 | Infineon Technologies | MOSFET N-CH 100V 70A TO252-3 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 70A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 77nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 70A · Input Capacitance (Ciss) @ Vds: 5550pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 125W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | from 0,64 | Additional information Find at suppliers | |
BSC110N06NS3 G | Infineon Technologies | MOSFET N-CH 60V 50A TDSON-8 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 11 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 33nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 2700pF @ 30V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Surface Mount · Package / Case: TDSON-8 | from 0,35 | Additional information Find at suppliers | |
IPDH4N03LAG | Infineon Technologies | MOSFET N-CH 25V 90A TO252-3-11 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 60A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 26nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 90A · Input Capacitance (Ciss) @ Vds: 3200pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 94W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | from 0,70 from 0,73 | Additional information Find at suppliers | |
IPP072N10N3 G | Infineon Technologies | MOSFET N-CH 100V 80A TO220-3 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 68nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 4910pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: TO-220 | from 1,05 | Additional information Find at suppliers | |
IPB70N04S3-07 | Infineon Technologies | MOSFET N-CH 40V 80A TO263-3 Series: OptiMOS™ · Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 70A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 40nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 2700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 79W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | from 0,48 | Additional information Find at suppliers |
© 2006 — 2024 ChipFind Ltd. Contact phone, e-mail, ICQ |
Catalog with parameters for 1,401,534 components | Register • Advertising |