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IPB019N06L3 G — MOSFET N-CH 60V 120A TO263-3

ManufacturerInfineon Technologies
Harmful substancesRoHS   Lead-free
SeriesOptiMOS™
Rds On (Max) @ Id, Vgs1.9 mOhm @ 100A, 10V
Drain to Source Voltage (Vdss)60V
Gate Charge (Qg) @ Vgs166nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C120A
Input Capacitance (Ciss) @ Vds28000pF @ 30V
FET PolarityN-Channel
FET FeatureLogic Level Gate
Power - Max250W
Mounting TypeSurface Mount
Package / CaseD²Pak, TO-263 (2 leads + tab)
Found under nameSP000453020
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
SPB80N03S2L-06 GSPB80N03S2L-06 GInfineon TechnologiesMOSFET N-CH 30V 80A D2PAK
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 80A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 68nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 2530pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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SPD30N03S2L10TSPD30N03S2L10TInfineon TechnologiesMOSFET N-CH 30V 30A DPAK
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 41.8nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1550pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 100W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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BSC889N03LS GInfineon TechnologiesMOSFET N-CH 30V 45A TDSON-8
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 16nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 45A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 28W  ·  Mounting Type: Surface Mount  ·  Package / Case: TDSON-8
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BSC119N03S GBSC119N03S GInfineon TechnologiesMOSFET N-CH 30V 30A TDSON-8
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 11.9 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 11nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1370pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 43W  ·  Mounting Type: Surface Mount  ·  Package / Case: TDSON-8
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IPD035N06L3 GInfineon TechnologiesMOSFET N-CH 60V 90A TO252-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 90A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 79nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 90A  ·  Input Capacitance (Ciss) @ Vds: 13000pF @ 30V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 167W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IPB04N03LBIPB04N03LBInfineon TechnologiesMOSFET N-CH 30V 80A D2PAK
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 55A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 40nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 5203pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 107W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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BSS209PW L6327Infineon TechnologiesMOSFET P-CH 20V 580MA SOT-323
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 550 mOhm @ 580mA, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 1.38nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 580mA  ·  Input Capacitance (Ciss) @ Vds: 89.9pF @ 15V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 520mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-323
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BSC123N08NS3 GInfineon TechnologiesMOSFET N-CH 80V 55A TDSON-8
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 12.3 mOhm @ 33A, 10V  ·  Drain to Source Voltage (Vdss): 80V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 55A  ·  Input Capacitance (Ciss) @ Vds: 1870pF @ 40V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 66W  ·  Mounting Type: Surface Mount  ·  Package / Case: TDSON-8
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IPD15N06S2L-64Infineon TechnologiesMOSFET N-CH 55V 19A TO252-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 64 mOhm @ 13A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 19A  ·  Input Capacitance (Ciss) @ Vds: 354pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 47W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IPP041N04N GInfineon TechnologiesMOSFET N-CH 40V 80A TO220-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 80A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 56nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 4500pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 94W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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BSO4410BSO4410Infineon TechnologiesMOSFET N-CH 30V 11.1A 8-SOIC
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 13 mOhm @ 11.1A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 21nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 11.1A  ·  Input Capacitance (Ciss) @ Vds: 1280pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC
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IPI086N10N3 GInfineon TechnologiesMOSFET N-CH 100V 80A TO262-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 73A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 55nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 3980pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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BSC123N10LS GInfineon TechnologiesMOSFET N-CH 100V 71A TDSON-8
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 12.3 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 68nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 71A  ·  Input Capacitance (Ciss) @ Vds: 4900pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 114W  ·  Mounting Type: Surface Mount  ·  Package / Case: TDSON-8
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IPB080N06N GIPB080N06N GInfineon TechnologiesMOSFET N-CH 60V 80A TO-263
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 80A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 93nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 3500pF @ 30V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 214W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IPP100N10S3-05Infineon TechnologiesMOSFET N-CH 100V 100A T0220-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 100A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 176nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 11570pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3
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IPP45N06S3-16IPP45N06S3-16Infineon TechnologiesMOSFET N-CH 55V 45A TO-220
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 15.7 mOhm @ 23A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 57nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 45A  ·  Input Capacitance (Ciss) @ Vds: 2980pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 65W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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IPP080N03L GInfineon TechnologiesMOSFET N-CH 30V 50A TO220-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 1900pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 47W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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IPP80N06S2L-H5Infineon TechnologiesMOSFET N-CH 55V 80A TO220-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 5 mOhm @ 80A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 190nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 5000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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BSS214NW L6327Infineon TechnologiesMOSFET N-CH 20V 1.5A SOT-323
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 0.8nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 1.5A  ·  Input Capacitance (Ciss) @ Vds: 143pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 500mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-323
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IPD70N10S3L-12Infineon TechnologiesMOSFET N-CH 100V 70A TO252-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 70A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 77nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 70A  ·  Input Capacitance (Ciss) @ Vds: 5550pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 125W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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BSC110N06NS3 GInfineon TechnologiesMOSFET N-CH 60V 50A TDSON-8
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 11 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 33nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 2700pF @ 30V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 50W  ·  Mounting Type: Surface Mount  ·  Package / Case: TDSON-8
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IPDH4N03LAGIPDH4N03LAGInfineon TechnologiesMOSFET N-CH 25V 90A TO252-3-11
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 60A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 26nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 90A  ·  Input Capacitance (Ciss) @ Vds: 3200pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 94W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IPP072N10N3 GInfineon TechnologiesMOSFET N-CH 100V 80A TO220-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 80A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 68nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 4910pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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IPB70N04S3-07Infineon TechnologiesMOSFET N-CH 40V 80A TO263-3
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 70A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 40nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 2700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 79W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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SPD50P03L GSPD50P03L GInfineon TechnologiesMOSFET P-CH 30V 50A TO-252
Series: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 7 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 126nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 6880pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (4 leads + tab)
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