Features

UNR1114 — TRANS PNP W/RES 80 HFE M TYPE

Manufacturer: Panasonic - SSG  •  Voltage - Collector Emitter Breakdown (Max): 50V  •  Resistor - Base (R1) (Ohms): 10K  •  Resistor - Emitter Base (R2) (Ohms): 47K  •  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V  •  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  •  Current - Collector (Ic) (Max): 100mA  •  Current - Collector Cutoff (Max): 500nA  •  Frequency - Transition: 80MHz  •  Power - Max: 400mW  •  Transistor Type: PNP - Pre-Biased  •  Mounting Type: Surface Mount  •  Package / Case: M-Type
Datasheet

Suppliers of «UNR1114»

Part NoManufacturerPriceStock
ООО "Интегральные схемы", St. Petersburg
+7 (812) 448-53-82, info@ic-ltd.ru
UNR1114from 7 days
Aspect, St. Petersburg
+7 (812) 309-89-32, info@aspect.spb.su
UNR1114from 7 days