Features

STB11NM60-1 — MOSFET N-CH 650V 11A I2PAK

Manufacturer: STMicroelectronics  •  RoHS/pb-free: RoHS   Pb-free  •  Series: MDmesh™  •  Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.5A, 10V  •  Drain to Source Voltage (Vdss): 650V  •  Gate Charge (Qg) @ Vgs: 30nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 11A  •  Input Capacitance (Ciss) @ Vds: 1000pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 160W  •  Mounting Type: Through Hole  •  Package / Case: I²Pak, TO-262 (3 straight leads + tab)  •  Other PartNo: 497-5379-5, STB11NM60-1-ND
Datasheet
  • STB11NM60-1 - N-CHANNEL 600V - 0.4ohm-11A TO-220 / TO-220FP / D2PAK / I2PAK MDmeshPower MOSFET
  • stb11nm60.pdf on site st.com
Cross-referenceSTB11NM60-1   Technical Specification »

Suppliers of «STB11NM601»

Part NoManufacturerPriceStock
IC STOCK TECHNOLOGY LIMITEDSTB11NM60-1 (D/c: : 07+)ST–1000
King-YiKu Optoelectronics Co., Ltd.STB11NM60-1 (22+; , D/c: : 2000)ST262$–
HongKong Teyou Huicheng Electronic Technology LimitedFresh data!STB11NM60-1 (Package: : TO-262; , D/c: : 22+)ST–55000
Digi-ic_SMART PIONEER ElectronicFresh data!STB11NM60-1 (MOSFET N-CH 650V 11A I2PAK Подробнее)STMicroelectronics–159556
AN-CHIPFresh data!STB11NM60-1 (микросхема интегральная электронная MOSFET N-CH 650V 11A I2PAK 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21)STMicroelectronics–24628
Geefook (shenzhen) Electronic Co., LtdSTB11NM60-1 (Подробнее)STMicroelectronics–35000
EK-KomponentFresh data!STB11NM60-1STMicroelectronics–3959