Features

SPP80N06S2L-H5 — MOSFET N-CH 55V 80A TO-220

Manufacturer: Infineon Technologies  •  Series: OptiMOS™  •  Rds On (Max) @ Id, Vgs: 5 mOhm @ 80A, 10V  •  Drain to Source Voltage (Vdss): 55V  •  Gate Charge (Qg) @ Vgs: 190nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 80A  •  Input Capacitance (Ciss) @ Vds: 6640pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 300W  •  Mounting Type: Through Hole  •  Package / Case: TO-220  •  Other PartNo: SP000014001, SPP80N06S2LH5
Datasheet
Cross-referenceSTP80NF55L-06   Technical Specification »

Suppliers of «SPP80N06S2LH5»

Part NoManufacturerPriceStock
ИП Хайруллина, Moscow
+7 (+7499) 9645172, semenov1719@mail.ru
Переходное кольцо с ПЭ покрытием, ст. A333,GR.6/ A420,GR.WPL6, DN 1 - 400, DN 2 - 16"/TRANSITION RING CONCENTRIC PE-COATED, A333,GR. 6/ A420,GR.WPL6, DN 400, DN2 16" (4 нед; , Package: : 1278 этикетка; , D/c: : 2016)–bulk: 103933.27 RUB3
HongKong Teyou Huicheng Electronic Technology Limited, ShenZhen
(86) 18938853596, Fax: (0755) 82569815, info3@tyhchk.com
SPP80N06S2L-H5 (Package: : TO-220; , D/c: : 22+)Rochester–55000
Digi-ic_SMART PIONEER Electronic, Hong Kong
(86) 13512338801, sales8@digi-ic.com
SPP80N06S2L-H5 (MOSFET N-CH 55V 80A TO220-3 Подробнее)Infineon Technologies–137044
AN-CHIP, St. Petersburg
+7 (812) 922-25-39, order@an-chip.ru
SPP80N06S2L-H5 (микросхема интегральная электронная MOSFET N-CH 55V 80A TO-220 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21)Infineon Technologies (IR)–8275
Aspect, St. Petersburg
+7 (812) 309-89-32, info@aspect.spb.su
SPP80N06S2LH5––from 7 days
ООО "Интегральные схемы", St. Petersburg
+7 (812) 448-53-82, info@ic-ltd.ru
SPP80N06S2LH5––from 7 days