Features

SPP80N06S2-H5 — MOSFET N-CH 55V 80A TO-220

Manufacturer: Infineon Technologies  •  Series: OptiMOS™  •  Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 80A, 10V  •  Drain to Source Voltage (Vdss): 55V  •  Gate Charge (Qg) @ Vgs: 155nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 80A  •  Input Capacitance (Ciss) @ Vds: 5500pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 300W  •  Mounting Type: Through Hole  •  Package / Case: TO-220  •  Other PartNo: SP000014000, SPP80N06S2H5
Datasheet
Cross-referenceSTP80NF55-06   Technical Specification »

Suppliers of «SPP80N06S2H5»

Part NoManufacturerPriceStock
King-YiKu Optoelectronics Co., Ltd.SPP80N06S2-H5 (22+; , D/c: : 1006)INFINEON220$–
HongKong Teyou Huicheng Electronic Technology LimitedFresh data!SPP80N06S2-H5 (Package: : TO220; , D/c: : 22+)Infineon–45000
Digi-ic_SMART PIONEER ElectronicFresh data!SPP80N06S2-H5 (MOSFET N-CH 55V 80A TO220-3 Подробнее)Infineon Technologies–160520
AN-CHIPFresh data!SPP80N06S2-H5 (микросхема интегральная электронная MOSFET N-CH 55V 80A TO-220 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21)Infineon Technologies (IR)–8269