Features
SPB100N06S2L-05
— MOSFET N-CH 55V 100A D2PAK
Discrete Semiconductor Products
»
MOSFETs - Single
Manufacturer: Infineon Technologies
•
Series: OptiMOS™
•
Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 80A, 10V
•
Drain to Source Voltage (Vdss): 55V
•
Gate Charge (Qg) @ Vgs: 230nC @ 10V
•
Current - Continuous Drain (Id) @ 25° C: 100A
•
Input Capacitance (Ciss) @ Vds: 7530pF @ 25V
•
FET Polarity: N-Channel
•
FET Feature: Logic Level Gate
•
Power - Max: 300W
•
Mounting Type: Surface Mount
•
Package / Case: D²Pak, TO-263 (2 leads + tab)
•
Other PartNo: SP000013714, SPB100N06S2L05T
Datasheet
SPB100N06S2L-05
- Optimos Power-transistor
SPP_B_100N06S2L-05_1.pdf
on site convergy.de
Cross-reference
STB80NF55L-06T4
Technical Specification »
Suppliers of «SPB100N06S2L05»
All
Russian
World
Part No
Manufacturer
Price
Stock
King-YiKu Optoelectronics Co., Ltd.
SPB100N06S2L-05
(22+; , D/c: : 15500)
INENOI
263$
–
IC STOCK TECHNOLOGY LIMITED
SPB100N06S2L-05
(D/c: : 20+)
INENOI
–
4833
AN-CHIP
SPB100N06S2L-05
(микросхема интегральная электронная MOSFET N-CH 55V 100A D2PAK 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21)
Infineon Technologies (IR)
–
8155
Стандарт СИЗ
SPB100N06S2L-05 (ST-STB80NF55L-06T4)
(Подробную информацию уточняйте у наших менеджеров.)
–
–
Stock
ООО "Интегральные схемы"
SPB100N06S2L05
–
–
from 7 days
EK-Komponent
SPB100N06S2L-05
Infineon Technologies AG
–
406
Aspect
SPB100N06S2L05
–
–
from 7 days
HongKong Teyou Huicheng Electronic Technology Limited
SPB100N06S2L-05
(Package: : TO-263; , D/c: : 22+)
Infineon
–
55000
Digi-ic_SMART PIONEER Electronic
SPB100N06S2L-05
(MOSFET N-CH 55V 100A TO263-3
Подробнее
)
Infineon Technologies
–
160406