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MMUN2211LT1 — TRANS BRT NPN 100MA 50V SOT23

Manufacturer: ON Semiconductor  •  Please note: Wire Change 14 oct 2008  •  Voltage - Collector Emitter Breakdown (Max): 50V  •  Resistor - Base (R1) (Ohms): 10K  •  Resistor - Emitter Base (R2) (Ohms): 10K  •  DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V  •  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  •  Current - Collector (Ic) (Max): 100mA  •  Current - Collector Cutoff (Max): 500nA  •  Power - Max: 400mW  •  Transistor Type: NPN - Pre-Biased  •  Mounting Type: Surface Mount  •  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3  •  Other PartNo: MMUN2211LT1OSTR
Datasheet
Cross-referenceDDTC114ECA, BCR133   Technical Specification »

   


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