Features | ![Hide](/static/search/close.gif) ![](/static/photo/mini/ixys/123684.gif) Manufacturer: IXYS • RoHS/pb-free: RoHS Pb-free • Series: HiPerFET™ • Rds On (Max) @ Id, Vgs: 250 mOhm @ 500mA, 10V • Drain to Source Voltage (Vdss): 600V • Gate Charge (Qg) @ Vgs: 200nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 26A • Input Capacitance (Ciss) @ Vds: 5100pF @ 25V • FET Polarity: N-Channel • FET Feature: Standard • Power - Max: 360W • Mounting Type: Through Hole • Package / Case: PLUS 247 |
Datasheet | ![Hide](/static/search/close.gif) - IXFX26N60Q - HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode
- 98919.pdf on site ixys.com
|
Suppliers of «IXFX26N60Q» | |
|