Features

IXFN27N80Q — MOSFET N-CH 800V 27A SOT-227B

Manufacturer: IXYS  •  RoHS/pb-free: RoHS   Pb-free  •  Series: HiPerFET™  •  Rds On (Max) @ Id, Vgs: 320 mOhm @ 500mA, 10V  •  Drain to Source Voltage (Vdss): 800V  •  Gate Charge (Qg) @ Vgs: 170nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 27A  •  Input Capacitance (Ciss) @ Vds: 7600pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 520W  •  Mounting Type: Chassis Mount  •  Package / Case: SOT-227B miniBLOC
Datasheet
  • IXFN27N80Q - HiPerFETTM Power MOSFETs Q-Class Single Die MOSFET N-Channel Enhancement Mode
  • 98813.pdf on site ixys.com

Suppliers of «IXFN27N80Q»

Part NoManufacturerPriceStock
Yee Hing Technology Co., Limit, ShenZhen
(86) 755 8278 5200, Fax: (86 755 8278 5200) , bzhang@zyhkyrade.com
IXFN27N80Q2380
Geefook (shenzhen) Electronic Co., Ltd, ShenZhen
(86) 15220089993, sales@geefook.com
IXFN27N80Q (Подробнее)Littelfuse35000
Icseek Global Limited, ShenZhen
(86755) 83000080(10), Fax: (86755) 830080(908), sales5@icseek.net
IXFN27N80Q (Оригинальный и наличный и новый)IXYS8643
Digi-ic_SMART PIONEER Electronic, Hong Kong
(86) 13512338801, sales8@digi-ic.com
IXFN27N80Q (MOSFET N-CH 800V 27A SOT-227B Подробнее)IXYS143846
Aspect, St. Petersburg
+7 (812) 309-89-32, info@aspect.spb.su
IXFN27N80Qfrom 7 days
ООО "Интегральные схемы", St. Petersburg
+7 (812) 448-53-82, info@ic-ltd.ru
IXFN27N80Qfrom 7 days