Additional info
0
0
0
Suppliers
Catalog
Datasheets
Cross-reference
Message Board
more
Log in
Register
more
Industry News
Contact info
Exact search
Only in-stock
Only with prices
Classic interface
Help and FAQ
Features
IXFM12N100
— MOSFET N-CH 1000V 12A TO-204AA
Discrete Semiconductor Products
»
MOSFETs - Single
Manufacturer: IXYS
•
RoHS/pb-free:
RoHS
Pb-free
•
Series: HiPerFET™
•
Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 500mA, 10V
•
Drain to Source Voltage (Vdss): 1000V (1kV)
•
Gate Charge (Qg) @ Vgs: 155nC @ 10V
•
Current - Continuous Drain (Id) @ 25° C: 12A
•
Input Capacitance (Ciss) @ Vds: 4000pF @ 25V
•
FET Polarity: N-Channel
•
FET Feature: Standard
•
Power - Max: 300W
•
Mounting Type: Chassis Mount
•
Package / Case: TO-204, TO-3
Datasheet
IXFM 12N100
- HiPerFETTM Power MOSFETs N-Channel Enhancement Mode
91531.pdf
on site ixys.com
Cross-reference
SHD225614, SHD239614
Technical Specification »
Components with selected parameters were not found.
Try to expand your search request by removing a few ticks in the filters block.