Features

IXFK80N20Q — MOSFET N-CH 200V 80A TO-264AA

Manufacturer: IXYS  •  RoHS/pb-free: RoHS   Pb-free  •  Series: HiPerFET™  •  Rds On (Max) @ Id, Vgs: 28 mOhm @ 500mA, 10V  •  Drain to Source Voltage (Vdss): 200V  •  Gate Charge (Qg) @ Vgs: 180nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 80A  •  Input Capacitance (Ciss) @ Vds: 4600pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 360W  •  Mounting Type: Through Hole  •  Package / Case: TO-264AA
Datasheet
  • IXFK80N20Q - HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode
  • 98605.pdf on site ixys.com
Cross-referenceSTY100NS20FD   Technical Specification »

Suppliers of «IXFK80N20Q»

Part NoManufacturerPriceStock
Geefook (shenzhen) Electronic Co., LtdIXFK80N20Q (Подробнее)Littelfuse–35000
Digi-ic_SMART PIONEER ElectronicFresh data!IXFK80N20Q (MOSFET N-CH 200V 80A TO264AA Подробнее)IXYS–162674
Icseek Global LimitedIXFK80N20Q (Оригинальный и наличный и новый)IXYS–8643
AN-CHIPFresh data!IXFK80N20Q (микросхема интегральная электронная MOSFET N-CH 200V 80A TO-264AA 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21)IXYS–30310
AspectIXFK80N20Q––from 7 days
ООО "Интегральные схемы"IXFK80N20Q––from 7 days