Features

IXFH6N100Q — MOSFET N-CH 1000V 6A TO-247AD

Manufacturer: IXYS  •  RoHS/pb-free: RoHS   Pb-free  •  Series: HiPerFET™  •  Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 500mA, 10V  •  Drain to Source Voltage (Vdss): 1000V (1kV)  •  Gate Charge (Qg) @ Vgs: 48nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 6A  •  Input Capacitance (Ciss) @ Vds: 2200pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 180W  •  Mounting Type: Through Hole  •  Package / Case: TO-247AD
Datasheet
Cross-referenceSTW11NK100Z   Technical Specification »

Suppliers of «IXFH6N100Q»

Part NoManufacturerPriceStock
Digi-ic_SMART PIONEER ElectronicFresh data!IXFH6N100Q (MOSFET N-CH 1000V 6A TO247AD Подробнее)IXYS–162646
AN-CHIPFresh data!IXFH6N100Q (микросхема интегральная электронная MOSFET N-CH 1000V 6A TO-247AD 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21)IXYS–26549
AspectIXFH6N100Q––from 7 days
ООО "Интегральные схемы"IXFH6N100Q––from 7 days
Geefook (shenzhen) Electronic Co., LtdIXFH6N100Q (Подробнее)Littelfuse–35000
Icseek Global LimitedIXFH6N100Q (Оригинальный и наличный и новый)IXYS–8643
HongKong Teyou Huicheng Electronic Technology LimitedFresh data!IXFH6N100Q (Package: : TO247; , D/c: : 22+)IXYS/–55000