Features

IXFC110N10P — MOSFET N-CH 100V 60A ISOPLUS220

Manufacturer: IXYS  •  RoHS/pb-free: RoHS   Pb-free  •  Series: PolarHV™  •  Rds On (Max) @ Id, Vgs: 17 mOhm @ 55A, 10V  •  Drain to Source Voltage (Vdss): 100V  •  Gate Charge (Qg) @ Vgs: 110nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 60A  •  Input Capacitance (Ciss) @ Vds: 3550pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 120W  •  Mounting Type: Through Hole  •  Package / Case: ISOPLUS220™
Datasheet
  • IXFC110N10P - PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated • MESFET
  • 99370.pdf on site ixys.com

Suppliers of «IXFC110N10P»

Part NoManufacturerPriceStock
Geefook (shenzhen) Electronic Co., Ltd, ShenZhen
(86) 15220089993, sales@geefook.com
IXFC110N10P (Подробнее)Littelfuse35000
Icseek Global Limited, ShenZhen
(86755) 83000080(10), Fax: (86755) 830080(908), sales5@icseek.net
IXFC110N10P (Оригинальный и наличный и новый)IXYS8643
Digi-ic_SMART PIONEER Electronic, Hong Kong
(86) 13512338801, sales8@digi-ic.com
IXFC110N10P (MOSFET N-CH 100V 60A ISOPLUS220 Подробнее)IXYS160850
AN-CHIP, St. Petersburg
+7 (812) 922-25-39, order@an-chip.ru
IXFC110N10P (микросхема интегральная электронная MOSFET N-CH 100V 60A ISOPLUS220 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21)IXYS30009
Aspect, St. Petersburg
+7 (812) 309-89-32, info@aspect.spb.su
IXFC110N10Pfrom 7 days
ООО "Интегральные схемы", St. Petersburg
+7 (812) 448-53-82, info@ic-ltd.ru
IXFC110N10Pfrom 7 days