Features | Manufacturer: International Rectifier • Series: HEXFET® • Rds On (Max) @ Id, Vgs: 125 mOhm @ 11A, 10V • Drain to Source Voltage (Vdss): 150V • Gate Charge (Qg) @ Vgs: 43nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 18A • Input Capacitance (Ciss) @ Vds: 900pF @ 25V • FET Polarity: N-Channel • FET Feature: Standard • Power - Max: 110W • Mounting Type: Through Hole • Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) • Other PartNo: *IRFU18N15D |