Features

IRF3315L — MOSFET N-CH 150V 21A TO-262

Manufacturer: International Rectifier  •  Series: HEXFET®  •  Rds On (Max) @ Id, Vgs: 82 mOhm @ 12A, 10V  •  Drain to Source Voltage (Vdss): 150V  •  Gate Charge (Qg) @ Vgs: 95nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 21A  •  Input Capacitance (Ciss) @ Vds: 1300pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 3.8W  •  Mounting Type: Through Hole  •  Package / Case: TO-262-3 (Straight Leads)  •  Other PartNo: *IRF3315L
Datasheet
Cross-reference2SK1620L   Technical Specification »

Suppliers of «IRF3315L»

Part NoManufacturerPriceStock
Icseek Global LimitedIRF3315L (Оригинальный и наличный и новый)INFINEON5246
HongKong Teyou Huicheng Electronic Technology LimitedFresh data!IRF3315L (Package: : TO262; , D/c: : 22+)IR45000
Digi-ic_SMART PIONEER ElectronicFresh data!IRF3315L (MOSFET N-CH 150V 21A TO262 Подробнее)Infineon Technologies157474
Digi-ic_SMART PIONEER ElectronicFresh data!IRF3315LPBF (MOSFET N-CH 150V 21A TO262 Подробнее)Infineon Technologies159015
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