Features

IPI100N06S3-03 — MOSFET N-CH 55V 100A I2PAK

Manufacturer: Infineon Technologies  •  RoHS/pb-free: RoHS   Pb-free  •  Series: OptiMOS™  •  Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V  •  Drain to Source Voltage (Vdss): 55V  •  Gate Charge (Qg) @ Vgs: 480nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 100A  •  Input Capacitance (Ciss) @ Vds: 21620pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 300W  •  Mounting Type: Through Hole  •  Package / Case: I²Pak, TO-262 (3 straight leads + tab)  •  Other PartNo: IPI100N06S303X, IPI100N06S303XK, SP000087992
Datasheet
Cross-referenceSTB80NF55-06-1   Technical Specification »

Suppliers of «IPI100N06S303»

Part NoManufacturerPriceStock
HongKong Teyou Huicheng Electronic Technology Limited, ShenZhen
(86) 18938853596, Fax: (0755) 82569815, info3@tyhchk.com
IPI100N06S3-03 (Package: : TO262; , D/c: : 22+)Infineon–45000
Digi-ic_SMART PIONEER Electronic, Hong Kong
(86) 13512338801, sales8@digi-ic.com
IPI100N06S3-03 (MOSFET N-CH 55V 100A TO262-3 Подробнее)Infineon Technologies–160323
AN-CHIP, St. Petersburg
+7 (812) 922-25-39, order@an-chip.ru
IPI100N06S3-03 (микросхема интегральная электронная MOSFET N-CH 55V 100A I2PAK 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21)Infineon Technologies (IR)–8063