Features

IPB80N06S3L-06 — MOSFET N-CH 55V 80A TO-263

Manufacturer: Infineon Technologies  •  RoHS/pb-free: RoHS   Pb-free  •  Series: OptiMOS™  •  Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 56A, 10V  •  Drain to Source Voltage (Vdss): 55V  •  Gate Charge (Qg) @ Vgs: 196nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 80A  •  Input Capacitance (Ciss) @ Vds: 9417pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 136W  •  Mounting Type: Surface Mount  •  Package / Case: D²Pak, TO-263 (2 leads + tab)  •  Other PartNo: IPB80N06S3L-06INDKR
Datasheet
Cross-referenceSTB80NF55L-08T4, STB80NF55L-06T4   Technical Specification »

Suppliers of «IPB80N06S3L06»

Part NoManufacturerPriceStock
Icseek Global Limited, ShenZhen
(86755) 83000080(10), Fax: (86755) 830080(908), sales5@icseek.net
IPB80N06S3L-06 (Оригинальный и наличный и новый)INFINEON6348
EK-Komponent, Moscow
+7 (495) 84951425030, ek-komponent@mail.ru
IPB80N06S3L-06Infineon Technologies AG1066
Digi-ic_SMART PIONEER Electronic, Hong Kong
(86) 13512338801, sales8@digi-ic.com
IPB80N06S3L-06 (MOSFET N-CH 55V 80A TO263-3 Подробнее)Infineon Technologies160578
IC STOCK TECHNOLOGY LIMITED, Changsha
(731) 85241908, Fax: (731) 85241908, claire2022@hkicstock.com
IPB80N06S3L-06 (D/c: : 0923+)INFINEON1000
AN-CHIP, St. Petersburg
+7 (812) 922-25-39, order@an-chip.ru
IPB80N06S3L-06 (микросхема интегральная электронная MOSFET N-CH 55V 80A TO-263 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21)Infineon Technologies (IR)8323
King-YiKu Optoelectronics Co., Ltd., ShenZhen
(86) 18819033453, vladimir@kingyiku.com
IPB80N06S3L-06 (22+; , D/c: : 2000)INFINEON263$
Стандарт СИЗ, Moscow
+7 (495) 799-28-33, sale@standartsiz.ru
IPB80N06S3L-06 (ST-STB80NF55L-06T4) (Подробную информацию уточняйте у наших менеджеров.)Stock