Features

APTM10HM09FT3G — MOSFET MODULE FULL BRIDGE SP3

Manufacturer: Microsemi-PPG  •  RoHS/pb-free: RoHS   Pb-free  •  Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V  •  Drain to Source Voltage (Vdss): 100V  •  Gate Charge (Qg) @ Vgs: 350nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 139A  •  Input Capacitance (Ciss) @ Vds: 9875pF @ 25V  •  FET Polarity: 4 N-Channel (H-Bridge)  •  FET Feature: Standard  •  Power - Max: 390W  •  Mounting Type: Chassis Mount  •  Package / Case: SP3
Datasheet

Suppliers of «APTM10HM09FT3G»

Part NoManufacturerPriceStock
Geefook (shenzhen) Electronic Co., Ltd, ShenZhen
(86) 15220089993, sales@geefook.com
APTM10HM09FT3G (Подробнее)Microchip Technology151.7613$35000
Icseek Global Limited, ShenZhen
(86755) 83000080(10), Fax: (86755) 830080(908), sales5@icseek.net
APTM10HM09FT3G (Оригинальный и наличный и новый)MICROCHIP9853
Digi-ic_SMART PIONEER Electronic, Hong Kong
(86) 13512338801, sales8@digi-ic.com
APTM10HM09FT3G (MOSFET 4N-CH 100V 139A SP3 Подробнее)Microchip Technology168598
ООО "Интегральные схемы", St. Petersburg
+7 (812) 448-53-82, info@ic-ltd.ru
APTM10HM09FT3Gfrom 7 days
Aspect, St. Petersburg
+7 (812) 309-89-32, info@aspect.spb.su
APTM10HM09FT3Gfrom 7 days