Features | Manufacturer: Toshiba • RoHS/pb-free: RoHS Pb-free • Rds On (Max) @ Id, Vgs: 30 mOhm @ 3A, 4.5V • Drain to Source Voltage (Vdss): 20V • Gate Charge (Qg) @ Vgs: 19nC @ 5V • Current - Continuous Drain (Id) @ 25° C: 6A • Input Capacitance (Ciss) @ Vds: 1550pF @ 10V • FET Polarity: P-Channel • FET Feature: Logic Level Gate • Power - Max: 700mW • Mounting Type: Surface Mount • Package / Case: VS-8 (2-3U1A) |
Datasheet | |
Suppliers of «TPCF8102(TE85L,F,M» | |
|