Features | ![Hide](/static/search/close.gif) Manufacturer: Toshiba • RoHS/pb-free: RoHS Pb-free • Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 19A, 10V • Drain to Source Voltage (Vdss): 30V • Gate Charge (Qg) @ Vgs: 50nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 38A • Input Capacitance (Ciss) @ Vds: 4600pF @ 10V • FET Polarity: N-Channel • FET Feature: Logic Level Gate • Power - Max: 45W • Mounting Type: Surface Mount • Package / Case: 8-SOIC |
Datasheet | ![Hide](/static/search/close.gif) |
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