Features | Manufacturer: Toshiba • RoHS/pb-free: RoHS Pb-free • Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 35A, 10V • Drain to Source Voltage (Vdss): 60V • Gate Charge (Qg) @ Vgs: 87nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 70A • Input Capacitance (Ciss) @ Vds: 5450pF @ 10V • FET Polarity: N-Channel • FET Feature: Logic Level Gate • Power - Max: 140W • Mounting Type: Through Hole • Package / Case: 2-10V1A |
Datasheet | |
Suppliers of «TK70D06J1(Q)» | |
Part No | Manufacturer | Price | Stock | ООО "Интегральные схемы", St. Petersburg +7 (812) 448-53-82, info@ic-ltd.ru | | TK70D06J1(Q) | – | – | from 7 days | Aspect, St. Petersburg +7 (812) 309-89-32, info@aspect.spb.su | | TK70D06J1(Q) | – | – | from 7 days | Digi-ic_SMART PIONEER Electronic, Hong Kong (86) 13512338801, sales8@digi-ic.com | | TK70D06J1(Q) (MOSFET N-CH 60V 70A TO220 Подробнее) | Toshiba Semiconductor and Storage | – | 162086 | HongKong Teyou Huicheng Electronic Technology Limited, ShenZhen (86) 18938853596, Fax: (0755) 82569815, info3@tyhchk.com | | TK70D06J1(Q) (Package: : TO-220; , D/c: : 22+) | Toshiba | – | 55000 |
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