Features | Manufacturer: Toshiba • RoHS/pb-free: RoHS Pb-free • Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 35A, 10V • Drain to Source Voltage (Vdss): 60V • Gate Charge (Qg) @ Vgs: 87nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 70A • Input Capacitance (Ciss) @ Vds: 5450pF @ 10V • FET Polarity: N-Channel • FET Feature: Logic Level Gate • Power - Max: 45W • Mounting Type: Through Hole • Package / Case: 2-10U1B |