| Features |  Manufacturer: Toshiba • RoHS/pb-free:  RoHS  Pb-free • Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 27A, 10V • Drain to Source Voltage (Vdss): 100V • Gate Charge (Qg) @ Vgs: 110nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 55A • Input Capacitance (Ciss) @ Vds: 5700pF @ 10V • FET Polarity: N-Channel • FET Feature: Logic Level Gate • Power - Max: 140W • Mounting Type: Through Hole • Package / Case: 2-10V1A |
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Suppliers of «TK55D10J1Q» | |
| Part No | Manufacturer | Price | Stock |  HongKong Teyou Huicheng Electronic Technology Limited, ShenZhen
(86) 18938853596, Fax: (0755) 82569815, info3@tyhchk.com |    | | TK55D10J1(Q) (Package: : TO-220; , D/c: : 22+) | Toshiba | – | 55000 |  Digi-ic_SMART PIONEER Electronic, Hong Kong
(86) 13512338801, sales8@digi-ic.com | | | TK55D10J1(Q) (MOSFET N-CH 100V 55A TO220 Подробнее) | Toshiba Semiconductor and Storage | – | 162084 |
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