Features

STI11NM60ND — MOSFET N-CH 600V 10A I2PAK

Manufacturer: STMicroelectronics  •  RoHS/pb-free: RoHS   Pb-free  •  Series: FDmesh™  •  Rds On (Max) @ Id, Vgs: 450 mOhm @ 5A, 10V  •  Drain to Source Voltage (Vdss): 600V  •  Gate Charge (Qg) @ Vgs: 30nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 10A  •  Input Capacitance (Ciss) @ Vds: 850pF @ 50V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 90W  •  Mounting Type: Through Hole  •  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
Datasheet

Suppliers of «STI11NM60ND»

Part NoManufacturerPriceStock
AspectSTI11NM60ND––from 7 days
ООО "Интегральные схемы"STI11NM60ND––from 7 days
HongKong Teyou Huicheng Electronic Technology LimitedFresh data!STI11NM60ND (Package: : TO-262; , D/c: : 22+)ST–55000
AN-CHIPFresh data!STI11NM60ND (микросхема интегральная электронная MOSFET N-CH 600V 10A I2PAK 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21)STMicroelectronics–39097
Geefook (shenzhen) Electronic Co., LtdSTI11NM60ND (Подробнее)STMicroelectronics–35000
Digi-ic_SMART PIONEER ElectronicFresh data!STI11NM60ND (MOSFET N-CH 600V 10A I2PAK Подробнее)STMicroelectronics–162259