Features

SPU08P06P — MOSFET P-CH 60V 8.83A TO-251

Manufacturer: Infineon Technologies  •  RoHS/pb-free: RoHS   Pb-free  •  Series: SIPMOS®  •  Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.2A, 10V  •  Drain to Source Voltage (Vdss): 60V  •  Gate Charge (Qg) @ Vgs: 13nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 8.83A  •  Input Capacitance (Ciss) @ Vds: 420pF @ 25V  •  FET Polarity: P-Channel  •  FET Feature: Standard  •  Power - Max: 42W  •  Mounting Type: Through Hole  •  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)  •  Other PartNo: SP000012086, SPU08P06PIN, SPU08P06PX, SPU08P06PXTIN, SPU08P06PXTIN-ND
Datasheet
Cross-referenceSTD10PF06-1, IRFU9024N   Technical Specification »

Suppliers of «SPU08P06P»

Part NoManufacturerPriceStock
Digi-ic_SMART PIONEER ElectronicFresh data!SPU08P06P (MOSFET P-CH 60V 8.83A TO251-3 Подробнее)Infineon Technologies158312
HongKong Teyou Huicheng Electronic Technology LimitedFresh data!SPU08P06P (Package: : TO-251; , D/c: : 22+)Infineon55000
AN-CHIPFresh data!SPU08P06P (микросхема интегральная электронная MOSFET P-CH 60V 8.83A TO-251 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21)Infineon Technologies (IR)7827
IC STOCK TECHNOLOGY LIMITEDSPU08P06P (D/c: : 2007+)INFINEON1054
King-YiKu Optoelectronics Co., Ltd.SPU08P06P (22+; , D/c: : 2054)INFINEON251$
ООО "Интегральные схемы"SPU08P06Pfrom 7 days
AspectSPU08P06Pfrom 7 days