Features

SPP10N10L — MOSFET N-CH 100V 10.3A TO-220

Manufacturer: Infineon Technologies  •  RoHS/pb-free: RoHS   Pb-free  •  Series: SIPMOS®  •  Rds On (Max) @ Id, Vgs: 154 mOhm @ 8.1A, 10V  •  Drain to Source Voltage (Vdss): 100V  •  Gate Charge (Qg) @ Vgs: 22nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 10.3A  •  Input Capacitance (Ciss) @ Vds: 444pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 50W  •  Mounting Type: Through Hole  •  Package / Case: TO-220  •  Other PartNo: SP000013849, SPP10N10LX
Datasheet

Suppliers of «SPP10N10L»

Part NoManufacturerPriceStock
Aspect, St. Petersburg
+7 (812) 309-89-32, info@aspect.spb.su
SPP10N10Lfrom 7 days
ООО "Интегральные схемы", St. Petersburg
+7 (812) 448-53-82, info@ic-ltd.ru
SPP10N10Lfrom 7 days
Digi-ic_SMART PIONEER Electronic, Hong Kong
(86) 13512338801, sales8@digi-ic.com
SPP10N10L (MOSFET N-CH 100V 10.3A TO220-3 Подробнее)Infineon Technologies160505
HongKong Teyou Huicheng Electronic Technology Limited, ShenZhen
(86) 18938853596, Fax: (0755) 82569815, info3@tyhchk.com
SPP10N10L (Package: : TO-220; , D/c: : 22+)Infineon55000
EK-Komponent, Moscow
+7 (495) 84951425030, ek-komponent@mail.ru
SPP10N10LVBsemi5088