Features

SPB10N10L G — MOSFET N-CH 100V 10.3A TO-263

Manufacturer: Infineon Technologies  •  RoHS/pb-free: RoHS   Pb-free  •  Series: SIPMOS®  •  Rds On (Max) @ Id, Vgs: 154 mOhm @ 8.1A, 10V  •  Drain to Source Voltage (Vdss): 100V  •  Gate Charge (Qg) @ Vgs: 22nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 10.3A  •  Input Capacitance (Ciss) @ Vds: 444pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 50W  •  Mounting Type: Surface Mount  •  Package / Case: D²Pak, TO-263 (2 leads + tab)  •  Other PartNo: SP000102169, SPB10N10L G-ND, SPB10N10LGINTR, SPB10N10LGXT

Suppliers of «SPB10N10LG»

Part NoManufacturerPriceStock
King-YiKu Optoelectronics Co., Ltd.SPB10N10L G (22+; , D/c: : 13000)Infineon263$–
Digi-ic_SMART PIONEER ElectronicFresh data!SPB10N10L G (MOSFET N-CH 100V 10.3A TO263-3 Подробнее)Infineon Technologies–160588
IC STOCK TECHNOLOGY LIMITEDSPB10N10L G (D/c: : 07+)Infineon–6000
AN-CHIPFresh data!SPB10N10L G (микросхема интегральная электронная MOSFET N-CH 100V 10.3A TO-263 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21)Infineon Technologies (IR)–8333
ООО "Интегральные схемы"SPB10N10LG––from 7 days
EK-KomponentFresh data!SPB10N10L GInfineon Technologies AG–2346
AspectSPB10N10LG––from 7 days
HongKong Teyou Huicheng Electronic Technology LimitedFresh data!SPB10N10L G (Package: : TO-263; , D/c: : 22+)Infineon–55000
HongKong Teyou Huicheng Electronic Technology LimitedFresh data!SPB10N10L G (Package: : D2PAK(TO-263); , D/c: : 22+)Infineon–45000
Digi-ic_SMART PIONEER ElectronicFresh data!SPB10N10LG (N-CHANNEL POWER MOSFET Подробнее)Infineon Technologies–149571