Features

SIE800DF-T1-E3 — MOSFET N-CH 30V 50A 10-POLARPAK

Manufacturer: Vishay/Siliconix  •  RoHS/pb-free: RoHS   Pb-free  •  Series: TrenchFET®  •  Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 11A, 10V  •  Drain to Source Voltage (Vdss): 30V  •  Gate Charge (Qg) @ Vgs: 35nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 50A  •  Input Capacitance (Ciss) @ Vds: 1600pF @ 15V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 104W  •  Mounting Type: Surface Mount  •  Package / Case: 10-PolarPAK® (S)  •  Other PartNo: SIE800DF-T1-E3DKR
Datasheet
  • doc on site vishay.com

Suppliers of «SIE800DF-T1-E3»

Part NoManufacturerPriceStock
IC STOCK TECHNOLOGY LIMITEDSIE800DF-T1-E3 (D/c: : 1014+)VISHAY–7059
King-YiKu Optoelectronics Co., Ltd.SIE800DF-T1-E3 (22+; , D/c: : 8059)VISHAY––
Icseek Global LimitedSIE800DF-T1-E3 (Оригинальный и наличный и новый)VISHAY–4325
AspectSIE800DF-T1-E3––from 7 days
EK-KomponentFresh data!SIE800DF-T1-E3Vishay–2549
ООО "Интегральные схемы"SIE800DF-T1-E3––from 7 days
HongKong Teyou Huicheng Electronic Technology LimitedFresh data!SIE800DF-T1-E3 (Package: : 10-POLARPAK; , D/c: : 22+)VISHAY/–45000
Digi-ic_SMART PIONEER ElectronicFresh data!SIE800DF-T1-E3 (MOSFET N-CH 30V 50A 10POLARPAK Подробнее)Vishay Siliconix–161322